Allicdata Part #: | FDMC2D8N025SOSTR-ND |
Manufacturer Part#: |
FDMC2D8N025S |
Price: | $ 0.47 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 124A 8PQFN |
More Detail: | N-Channel 25V 124A (Tc) 47W (Tc) Surface Mount 8-P... |
DataSheet: | FDMC2D8N025S Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.41911 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-PQFN (3.3x3.3), Power33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 47W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4615pF @ 13V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.9 mOhm @ 28A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 124A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMC2D8N025S is a type of MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor), which is used in power management and regulation applications. The transistor is a single component, meaning that it is constructed using a single piece of silicon material. This is contrasted with dual MOSFETs, which are constructed using two separate pieces of silicon material. The FDMC2D8N025S is constructed using N-channel MOSFETs, which are used in applications that require switching of high power and/or high voltage, such as motor control, power amplifiers, power converters, and battery management.
The FDMC2D8N025S is a readily available component and can be found in a wide variety of applications. It is commonly used in applications such as DC-DC converters, AC-DC converters, motor control, power amplifiers, and power supplies. The device can be used in a variety of topologies, including half-bridge, full-bridge, and quadruple-interleaved.
The FDMC2D8N025S is built using a number of components, which include the MOSFETs, sources, gates, and substrate. The MOSFETs are responsible for regulating the amount of current that passes through the component. Sources are the terminals that connect the MOSFETs to the external circuit, while the gates are the terminals that connect the MOSFETs to the control circuit. The substrate is responsible for providing electrical insulation between the MOSFETs and the external circuit.
The FDMC2D8N025S operates on the principle of drain-source breakdown, where an electric current flow is regulated depending on the applied voltage. The device has two states, an ON state and an OFF state. The ON state is established when the applied voltage is greater than the threshold voltage, resulting in the current passing through the device. The OFF state is established when the applied voltage is lower than the threshold voltage, resulting in the current not passing through the device.
The FDMC2D8N025S has a gate-source threshold voltage of 4.5V, a breakdown voltage of 25V, and a maximum drain-source voltage of 30V. The device has a maximum drain current of 8A and can operate over a temperature range of -55°C to +150°C. It has excellent thermal characteristics, with a maximum thermal resistance of 5°C/W.
The FDMC2D8N025S is a commonly used device for power management and regulation applications, and is widely available for purchase. It is simple to use and understand, and is often used in a variety of topologies. It is built using components that are well established and reliable, and has excellent thermal characteristics.
The specific data is subject to PDF, and the above content is for reference
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