| Allicdata Part #: | SIRA22DP-T1-RE3TR-ND |
| Manufacturer Part#: |
SIRA22DP-T1-RE3 |
| Price: | $ 0.48 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 25V 60A POWERPAKSO-8 |
| More Detail: | N-Channel 25V 60A (Tc) 83.3W (Tc) Surface Mount Po... |
| DataSheet: |  SIRA22DP-T1-RE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.43412 |
Specifications
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 83.3W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7570pF @ 10V |
| Vgs (Max): | +16V, -12V |
| Gate Charge (Qg) (Max) @ Vgs: | 155nC @ 10V |
| Series: | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs: | 0.76 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SIRA22DP-T1-RE3 is a power MOSFET transistor designed for a wide range of applications. It is part of a family of semiconductor devices known as MOSFETs, or metal-oxide-semiconductor field-effect transistors. This article will discuss the application field and working principle of SIRA22DP-T1-RE3.A MOSFET is a three-terminal semiconductor device consisting of the gate, source and drain. It is an integral part of the family of semiconductor devices known as transistors. The gate, source, and drain are all connected by a substrate, which can be of various types depending on the type of MOSFET. The SIRA22DP-T1-RE3 is a power MOSFET which is generally used to control large amounts of current. It is commonly used in the design of switching power supplies, motor drivers and high voltage power amplifiers.The source of the SIRA22DP-T1-RE3 is the area where the electrons are produced, while the drain is the area where the electrons flow into. The gate is used to control the flow of electrons from the source to the drain. The gate is insulated from the other regions of the device by a thin layer of SiO2. This layer acts as a barrier between the gate and the source and drain regions, preventing any current from flowing in either direction. The SIRA22DP-T1-RE3 has a current carrying capacity of up to 22A and a drain-source breakdown voltage of 200V. It is capable of operating at up to +150°C junction temperature for reliable operation. The device is available in a surface-mount package, making it well-suited for use in space-constrained applications. The working principle of the SIRA22DP-T1-RE3 is based on the principle of field effect. A majority of electrons are induced in the drain region when a reverse biased voltage is applied to the gate-source junction. This generates an electric field which attracts the electrons towards the drain. The current in the drain is controlled by the gate voltage. When a positive voltage is applied to the gate, the electric field across the gate-source junction is increased, resulting in a higher flow of electrons from the source to the drain. In summary, the SIRA22DP-T1-RE3 is a power MOSFET transistor designed for a wide range of applications. It has a current carrying capacity of up to 22A and a drain-source breakdown voltage of 200V. It is commonly used in the design of switching power supplies, motor drivers and high voltage power amplifiers. The device operates based on the principle of field effect, where the current in the drain is controlled by the gate voltage. This makes the SIRA22DP-T1-RE3 an ideal choice for a wide range of power supply applications.The specific data is subject to PDF, and the above content is for reference
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