CSD16325Q5C

Vgs(th) (Max) @ Id:	1.4V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-VSON-CLIP (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4000pF @ 12.5V
Vgs (Max):	+10V, -8V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 4.5V
Series:	NexFET™
Rds On (Max) @ Id, Vgs:	2 mOhm @ 30A, 8V
Drive Voltage (Max Rds On, Min Rds On):	3V, 8V
Current - Continuous Drain (Id) @ 25°C:	33A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Last Time Buy
Packaging:	Tape & Reel (TR)

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The CSD16325Q5C is a N-channel MOSFET from Texas Instruments. It is used in power management applications and is particularly well-suited for battery-powered solutions due to its low on-state resistance and high-level drain-source breakdown voltage. This MOSFET has a variety of features and is used in a wide range of applications such as power supply, lighting, battery management, and other power management solutions.

Application Field

The CSD16325Q5C is a popular choice for use on automotive battery cell management systems. Because of its robust drain-source breakdown voltage, high current and temperature operation, and fast switching time, this MOSFET is well-suited for the high-performance demands of these types of applications. Additionally, because of its reliable low-on-state resistance and low dropout voltage, it is also well-suited for use in high-frequency switching applications.

Other Applications

In addition to automotive cell management systems, the CSD16325Q5C is also used in high-power solar energy systems. This MOSFET boasts an impressive maximum drain current of 55A, making it an excellent choice for operating high-current photovoltaic (PV) cells. Additionally, this MOSFET is used in a variety of other power management applications such as LED lighting, power supplies, and battery management.

Working Principle

The CSD16325Q5C is a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a voltage-controlled device, meaning that a voltage applied between its gate and the source will control the current that flows between the source and drain. This is how the device is able to regulate the power supplied to a load.When an appropriate voltage is applied to the gate, a current flows between the source and drain. The current is proportional to the applied voltage, and as the voltage increases, the current increases as well. This allows the device to be used in either linear or switching operations.The CSD16325Q5C is rated for a maximum drain current of 55A, which makes it highly suitable for many applications. Additionally, this MOSFET has a robust drain-source breakdown voltage of 25V and a fast switching time of 130ns, making it a reliable and efficient choice.

Conclusion

The CSD16325Q5C is a popular N-channel MOSFET from Texas Instruments. With its robust drain-source breakdown voltage and high current and temperature operation, it is well-suited for use in a variety of applications such as automotive cell management, high-power solar energy systems, LED lighting, power supplies, and battery management. This MOSFET is a voltage-controlled device, meaning it is used in either linear or switching operations. With its fast switching time of 130ns and a maximum drain current of 55A, it is highly reliable and efficient.

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