Allicdata Part #: | 296-24255-2-ND |
Manufacturer Part#: |
CSD16411Q3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 25V 56A 8-SON |
More Detail: | N-Channel 25V 14A (Ta), 56A (Tc) 2.7W (Ta) Surface... |
DataSheet: | CSD16411Q3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-VSON (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.7W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 12.5V |
Vgs (Max): | +16V, -12V |
Gate Charge (Qg) (Max) @ Vgs: | 3.8nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 56A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD16411Q3 is a high-voltage and high-power, N-channel trench metal-oxide-semiconductor field-effect transistor (MOSFET). This part is housed in a SmartFlat TO-220 7-lead package. It has an operating temperature range from -55 °C to 175 °C, and can handle currents of up to 30 amps and voltages up to 100 volts. It is designed to provide extremely fast switching times and improved robustness against short-circuit and over-voltage conditions.
The CSD16411Q3 is a highly versatile device with a wide range of applications. It is frequently used in audio amplifiers, lighting control systems, power supplies, motor control, and in the switching of high power loads. Due to its high current and voltage ratings, it can also be used in high-power rectifier circuits.
The CSD16411Q3 is a depletion-mode MOSFET, which means that it has very low input capacitance and operates as an open circuit until the gate voltage is increased above the threshold voltage. This allows it to have extremely fast switching times – much faster than an equivalent bipolar junction transistor (BJT). The CSD16411Q3 also has a high maximum drain source voltage breakdown of 100V and a low total gate charge of 4.5 nC, making it well-suited for high-speed switching applications.
The CSD16411Q3 is a heavily doped N-channel MOSFET, and its operation is based on the principle of electric charge flow between the source and drain. When the gate voltage is increased above the threshold voltage, the electric field between the gate and channel widens, allowing current to flow between the source and drain. As the gate voltage is increased further, more current can flow through the channel, resulting in a higher drain to source voltage.
The CSD16411Q3 is a very fast and reliable MOSFET that is suitable for a wide range of high-power applications. It has excellent switching performance, high efficiency and can handle large currents and voltages, making it an ideal choice for switching high power loads. It is also very compact, making it ideal for space-constrained designs. The CSD16411Q3 is a great choice for improving the performance and reliability of any power electronics application.
The specific data is subject to PDF, and the above content is for reference
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