Allicdata Part #: | 296-25646-2-ND |
Manufacturer Part#: |
CSD16340Q3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 25V 60A 8SON |
More Detail: | N-Channel 25V 21A (Ta), 60A (Tc) 3W (Ta) Surface M... |
DataSheet: | CSD16340Q3 Datasheet/PDF |
Quantity: | 101069 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSON-CLIP (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 12.5V |
Vgs (Max): | +10V, -8V |
Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 20A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 8V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Ta), 60A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD16340Q3, an enhancement NFET (ENFET) transistor is one of the most popular transistors used in applications, from small scale to industrial equipments. The CSD16340Q3 is a single integrated NFET (ENFET) device, which features a P-Channel and an N-Channel device in one package. It is packaged in an industry-standard SOIC (Small Outline Integrated Circuit) package that has a footprint of 3.2mm x 3.2mm for easy mounting and installation.
The applications of this device are wide, ranging from various types of audio applications, such as active and passive devices, to the industrial and automotive sector, specifically high power applications. In automotive applications, the CSD16340Q3 is capable of meeting the stringent requirements of the automotive industry with regards to power consumption, current drive and on-state resistance. Furthermore, the device is completely compatible with standard IC fabrication processes, a crucial factor when it comes to reliability and cost.
In terms of its working principle, the CSD16340Q3 is an ENFET device, which performs well when used as a switch. The device has two terminals - a gate (G) and a drain/source (D/S), and the current flow is controlled by the voltage applied at the gate with respect to the source/drain. This voltage controls the supply of minority carriers (holes or electrons depending on the channel type) from the source to the drain, activating the device.
The working of the NFET transistor can be explained through the basic theories of gate control. It is based on the principle that a voltage difference between the drain/source and the gate will cause the gate region to behave like an insulator. Therefore, when a positive voltage is applied to the gate, carriers (holes or electrons) are pulled away from the gate region and into the drain/source, which causes the device to be activated.
When the voltage differences between the gate and the drain/source reaches a certain threshold, it causes the transistor to be saturated, which allows the carrier to traverse the gate region, resulting in current flow. The CSD16340Q3 is particularly useful in audio applications, because of its capability to amplify current signals even at high volumes.
In conclusion, the CSD16340Q3 is one of the most widely used transistors, due to its wide range of applications. Its working principle is based on the basic laws of gate control, wherein a voltage difference between the gate and the source/drain is used to control the flow of minority carriers in the transistor, thereby allowing current flow through it. The device is particularly popular for providing amplification in audio applications.
The specific data is subject to PDF, and the above content is for reference
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