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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
FDC634PTR-ND	FDC634P	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 779pF @ 10V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	3000 Order	--
568-9712-2-ND	BUK7880-55A,115	NXP USA Inc	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Power Dissipation (Max): 8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
FDD2570-ND	FDD2570	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1907pF @ 75V Power Dissipation (Max): 3.2W (Ta), 70W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
BSS308PEL6327HT SA1TR-ND	BSS308PEL6327HT SA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 11A Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
NDP4050L-ND	NDP4050L	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -65C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	1+: $0
917-1200-2-ND	EPC2203	EPC	View more Series: Automotive, AEC-Q101, eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 1.7A Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600A Gate Charge (Qg) (Max) @ Vgs: 0.83nC @ 5V Vgs (Max): +5.75V, -4V Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	27500 Order	--
RD3L080SNTL1TR- ND	RD3L080SNTL1	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V Power Dissipation (Max): 15W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	2500+: $0.281
FA57SA50LC-ND	FA57SA50LC	Vishay Semiconductor Diodes Division	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Power Dissipation (Max): 625W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	1000 Order	1+: $0
SPB21N10T-ND	SPB21N10T	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 44A Gate Charge (Qg) (Max) @ Vgs: 38.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V Power Dissipation (Max): 90W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
SPI21N10IN-ND	SPI21N10	Infineon Technologies	View more Series: SIPMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 44A Gate Charge (Qg) (Max) @ Vgs: 38.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V Power Dissipation (Max): 90W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
497-3230-2-ND	STS5PF20V	STMicroelectronics	View more Series: STripFET II Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 2.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
NTHD3101FT3G-ND	NTHD3101FT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET Package / Case: 8-SMD, Flat Lead	1000 Order	1+: $0
785-1017-2-ND	AO3424	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 15V Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3L Package / Case: TO-236-3, SC-59, SOT-23-3	99000 Order	--
SI7450DP-T1-E3T R-ND	SI7450DP-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 1.9W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	18000 Order	--
IXFT40N30Q-ND	IXFT40N30Q	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	1000 Order	1+: $0
1727-2222-2-ND	BUK7880-55A/CUX	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Power Dissipation (Max): 8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	77000 Order	1000+: $0.1246
APT60M80JVR-ND	APT60M80JVR	Microsemi Corporation	View more Series: POWER MOS V Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V Power Dissipation (Max): 568W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP Package / Case: SOT-227-4, miniBLOC	1000 Order	1+: $0
STD25P03LT4G-ND	STD25P03LT4G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
AOC2423-ND	AOC2423	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V Power Dissipation (Max): 600mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-AlphaDFN (0.97x0.97) Package / Case: 4-SMD, No Lead	1000 Order	1+: $0
DMP2160UDITR-ND	DMP2160U-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 627pF @ 10V Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
ZXMP4A57E6TATR- ND	ZXMP4A57E6TA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 833pF @ 20V Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	6000 Order	--
IXTH1N450HV-ND	IXTH1N450HV	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 10V Vgs(th) (Max) @ Id: 6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Power Dissipation (Max): 520W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247HV Package / Case: TO-247-3 Variant	91 Order	1+: $23.6187 30+: $20.076 120+: $18.6588
SPP21N10IN-ND	SPP21N10	Infineon Technologies	View more Series: SIPMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 44A Gate Charge (Qg) (Max) @ Vgs: 38.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V Power Dissipation (Max): 90W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	--
568-12236-2-ND	BUK9880-55,135	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 80 mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power Dissipation (Max): 8.3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
ZXMN6A08GTR-ND	ZXMN6A08GTA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 459pF @ 40V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	25000 Order	--
FDB4020P-ND	FDB4020P	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 80 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V Power Dissipation (Max): 37.5W (Tc) Operating Temperature: -65C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IPP80CN10NGHKSA 1-ND	IPP80CN10NGHKSA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 12A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 716pF @ 50V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
ZXMN6A08E6TC-ND	ZXMN6A08E6TC	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 459pF @ 40V Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	1000 Order	1+: $0
NTHD3101FT1GOST R-ND	NTHD3101FT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET Package / Case: 8-SMD, Flat Lead	3000 Order	--
PMN70EPEX-ND	PMN70EPEX	Nexperia USA Inc.	View more Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 15V Power Dissipation (Max): 570mW (Ta), 6.25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	1000 Order	3000+: $0.0777
SI8819EDB-T2-E1 -ND	SI8819EDB-T2-E1	Vishay Siliconix	View more Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 3.7V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 6V Power Dissipation (Max): 900mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-MICRO FOOT (0.8x0.8) Package / Case: 4-XFBGA	1000 Order	--
APTM120UM70DAG- ND	APTM120UM70DAG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 171A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 85.5A, 10V Vgs(th) (Max) @ Id: 5V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 1650nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 43500pF @ 25V Power Dissipation (Max): 5000W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	1000 Order	100+: $157.294
VS-FA72SA50LC-N D	VS-FA72SA50LC	Vishay Semiconductor Diodes Division	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Power Dissipation (Max): 1136W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	1000 Order	160+: $18.5528
497-4364-2-ND	STN5PF02V	STMicroelectronics	View more Series: STripFET II Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 2.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	--
ZVP1320FTR-ND	ZVP1320FTA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 35mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	30000 Order	--
568-10787-2-ND	PMF87EN,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 15V Power Dissipation (Max): 275mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3 Package / Case: SC-70, SOT-323	1000 Order	1+: $0

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