Allicdata Part #: | IXTH1N450HV-ND |
Manufacturer Part#: |
IXTH1N450HV |
Price: | $ 25.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 2500V TO 4500V VERY HI VOLT PWR |
More Detail: | N-Channel 4500V 1A (Tc) 520W (Tc) Through Hole TO-... |
DataSheet: | IXTH1N450HV Datasheet/PDF |
Quantity: | 91 |
1 +: | $ 23.61870 |
30 +: | $ 20.07600 |
120 +: | $ 18.65880 |
Vgs(th) (Max) @ Id: | 6V @ 250µA |
Package / Case: | TO-247-3 Variant |
Supplier Device Package: | TO-247HV |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 520W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 80 Ohm @ 50mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tc) |
Drain to Source Voltage (Vdss): | 4500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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~The Ixth1n450hv belongs to the class of transistors, often referred to as FETs, or field-effect transistors. Specifically, it is a single mosfet, with rather good performance. This has made it a popular choice for a variety of applications, including power switching and signal switching. It has been used in both commercial and military applications.
A mosfet is an insulated-gate semiconductor device that, like traditional transistors, can act as an amplifier or a switch. It is an important component in many electronic circuits, as it can be used to control the flow of electric current. The main difference between a mosfet and a traditional transistor is that it is made with an insulated gate, which requires a voltage to turn the current on or off. This makes a mosfet perfect for switching applications, as it is able to quickly turn on and off the current.
The IXTH1N450HV is a field-effect transistor with a voltage rating of 500 volts and a maximum average on-state drain current of -1.2 Amps. It is rated for a maximum power dissipation of 2.4 Watts, and it has a maximum reverse transfer capacitance of 150pF. The maximum on-state resistance is 0.03 Ohms, and it has a gate-to-drain breakdown voltage of 700 volts.
The working principle of the IXTH1N450HV is just like that of any other mosfet. When a voltage is applied to the gate electrode, it establishes an electric field across the channel between the source and the drain. This electric field modulates the surface of the channel in a way that controls the flow of electrons between the source and the drain. This is what allows the device to act as a switch, or an amplifier, according to the application.
The IXTH1N450HV has many practical applications. It can be used as a core component in electronic circuits to control the flow of current, power, or signal. It can be used as a switch, controlling the flow of current in a circuit, or as an amplifier, boosting the current flow and providing greater signal power. It can also be used for power conversion or for voltage regulation in a high-voltage circuit.
Due to its good performance and versatility, the IXTH1N450HV has become popular for various applications in both commercial and military applications. It has become a preferred choice for low-power switch applications and for low-cost, low-power signal switching. It has also been used for high-power switching and signal switching in commercial and military systems. Because of its excellent capacity to respond to the signal and adjust the current flow, it is also suitable for motor control applications and in systems where signal switching needs to be precise.
In sum, the IXTH1N450HV is a single mosfet transistor, with a wide range of applications in commercial and military systems. Its unique attributes make it an excellent choice for numerous power- and signal-switching applications. With a voltage rating of 500 volts and an average on-state drain current of -1.2 Amps, it is perfect for motor control and precise signal switching. Thanks to its low on-state resistance, high-power switching, and good gate-to-drain breakdown voltage, it is one of the most useful transistors available today.
The specific data is subject to PDF, and the above content is for reference
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