ZXMN6A08GTA Allicdata Electronics

ZXMN6A08GTA Discrete Semiconductor Products

Allicdata Part #:

ZXMN6A08GTR-ND

Manufacturer Part#:

ZXMN6A08GTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 3.8A SOT223
More Detail: N-Channel 60V 3.8A (Ta) 2W (Ta) Surface Mount SOT-...
DataSheet: ZXMN6A08GTA datasheetZXMN6A08GTA Datasheet/PDF
Quantity: 25000
Stock 25000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 459pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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ZXMN6A08GTA Application Field and Working Principle

ZXMN6A08GTA is a single transistor mosfet (metal oxide semiconductor field effect transistor) integrated circuit product made by Zetex Semiconductors. It is a solution of one or single device type, mainly used for high frequency analog switching applications in automotive, industrial, and consumer products. In this article, we overview the application field and working principle of the ZXMN6A08GTA.

Application Field

The ZXMN6A08GTA is ideally suited for use in high frequency analog switching applications, such as audio, video, and digital switching, as well as in power amplifiers and power supplies. The ZXMN6A08GTA features a low on-resistance and low input capacitance. The low input capacitance results in a low turn-on time and reduced charge injection into the gate circuit, thus reducing switching losses. The ZXMN6A08GTA can also be used in power oscillators and power drivers. It is designed to increase efficiency and enhance system robustness in converting, controlling and monitoring dynamic loads in high frequency applications. The ZXMN6A08GTA is suitable for automotive and other environments with high temperatures and/or extreme mechanical stress conditions.

Working Principle

A field effect transistor (FET) is a three-terminal transistor, the gate of which acts like a faucet to control the flow of electrons from the source to the drain. When a voltage is applied to the gate, it acts to create an electric field in a channel between the source and drain. This electric field modulates the conductivity of the channel between the source and drain in which charge carriers (electrons or holes) move, allowing current to flow from the source to the drain. The ZXMN6A08GTA is a metal oxide semiconductor field effect transistor (MOSFET) and is operated in the enhancement mode. In this mode, no voltage is applied to the gate to turn the transistor off. The source is connected to a negative voltage, the drain is connected to a positive voltage and no current flows. To turn the transistor on, a positive voltage must be applied to the gate and the source voltage will then become more positive relative to the drain voltage. The drain current will be controlled by the voltage applied to the gate.

Conclusion

In conclusion, the ZXMN6A08GTA is a single transistor MOSFET integrated circuit that is well suited for use in high frequency analog switching applications. Its low on-resistance and low input capacitance allow it to switch efficiently while also reducing switching losses. In addition, the ZXMN6A08GTA is designed to withstand high temperatures and extreme conditions, making it a good solution for automotive and other applications.

The specific data is subject to PDF, and the above content is for reference

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