BUK7880-55A,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-9712-2-ND |
Manufacturer Part#: |
BUK7880-55A,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 55V 7A SOT-223 |
More Detail: | N-Channel 55V 7A (Tc) 8W (Tc) Surface Mount SOT-22... |
DataSheet: | BUK7880-55A,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 8W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK7880-55A is a single N-Channel Enhancement Mode Power MOSFET which offers a premium combination of power efficiency, flexibility and reliability when operating in the highest power requirements. This MOSFET is designed for applications such as high power switching, DC-DC conversion and high frequency switching.
The primary benefit of this MOSFET is that it can be used to control large amounts of current, up to 55A in this case, with reduced power consumption. This makes the MOSFET suitable for applications where energy efficiency is paramount, such as battery operated systems. The MOSFET also features a low resistance of 8 mΩ, which makes it ideal for high speed applications.
The BUK7880-55A has a maximum breakdown voltage of 57 V and an avalanche rating of 18 V. This high voltage, combined with the low resistance, ensures that the MOSFET can efficiently switch current with minimal loss. The MOSFET also features an extended operating temperature range of -40°C to +125°C. This range is suited to a variety of environments, including extreme temperature applications such as automotive, off-grid installations and industrial automation.
The BUK7880-55A MOSFET operates using the principle of majority carrier injection. When an electric charge is applied to the MOSFETs gate, electrons from the Gate region are attracted towards the source. This process causes a flow of current across the drain and source terminals, which results in a voltage control of the MOSFET. To ensure optimal performance and power efficiency, the majority carrier injection method should be utilized.
The BUK7880-55A is an excellent choice for applications where high power is needed but where energy efficiency and reliability are also a priority. Its wide operating temperature range and low-level resistance makes it suitable for high speed switching, DC-DC conversion and more. The low power losses associated with majority carrier injection provide the added benefit of reduced power consumption, making the BUK7880-55A an ideal choice for battery operated systems.
The specific data is subject to PDF, and the above content is for reference
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