SI7450DP-T1-E3 Allicdata Electronics
Allicdata Part #:

SI7450DP-T1-E3TR-ND

Manufacturer Part#:

SI7450DP-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 200V 3.2A PPAK SO-8
More Detail: N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount P...
DataSheet: SI7450DP-T1-E3 datasheetSI7450DP-T1-E3 Datasheet/PDF
Quantity: 18000
Stock 18000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 80 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7450DP-T1-E3 is a product from the family of depletion-mode MOSFETs. It belongs to the category of single transistors and field-effect transistors (FETs). These devices are designed primarily for usage in diverse applications such as amplifiers, buffering and switching. As a depletion-mode FET, this transistor works on the principle of suppressing its own conductivity, thereby providing an attractive alternative to traditional transistors.

The SI7450DP-T1-E3 is capable of operating at maximum frequencies up to 3GHz, making it suitable for operation in HF to RF and microwave circuits or components. It has a maximum power dissipation of 4.25W and low thermal resistance junction to case of 0.45℃/W. This component ensures superior performance with very low on-state resistance of 0.04 Ω, and a reverse breakdown voltage of 10V.

The SI7450DP-T1-E3 stands out for its attractive features such as a ultra−high frequency operation and an excellent Avalanche characteristics. This ensures that the component can be used in a variety of applications, such as high frequency amplifiers and radio frequency modulator and demodulator circuits. It is also ideal for use in low noise amplifiers, low loss switching, voltage control and harmonic rejection applications. With a fast switching time of up to 30ns, it is perfect for high performance logic-level switching.

The SI7450DP-T1-E3 is a reliable component and is designed with a small form factor which helps in achieving higher component density in a limited space. It is also designed to reduce parasitics and improve stability with an integrated ESD protection feature. Lastly, this component is certified according to UL and REACH standards, making it a viable option for many industrial and commercial applications.

In summary, the SI7450DP-T1-E3 is an advanced transistors and field-effect transistor (FETs) which provides excellent performance under high-frequency operation. With features such as its ultra-high frequencies, superior performance, fast switching and low on-state resistance, it is an ideal choice for amplifier, buffering, switching, voltage control and harmonic rejection applications. It is also certified according to international standards such as UL and REACH, making it very reliable and dependable.

The specific data is subject to PDF, and the above content is for reference

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