| Allicdata Part #: | 1727-2222-2-ND |
| Manufacturer Part#: |
BUK7880-55A/CUX |
| Price: | $ 0.14 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 55V 7A SOT223 |
| More Detail: | N-Channel 55V 7A (Tc) 8W (Tc) Surface Mount SOT-22... |
| DataSheet: |  BUK7880-55A/CUX Datasheet/PDF |
| Quantity: | 77000 |
| 1000 +: | $ 0.12456 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | SOT-223 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 8W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 80 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The BUK7880-55A/CUX is a n-channel enhancement mode power field effect transistor (FET) designed for automotive applications where power MOSFETs have been traditionally used. The BUK7880-55A/CUX is a versatile power device that offers a large number of advantages over its MOSFET counterparts. The device is suitable for applications such as high voltage, high speed switching, synchronous rectification, and DC/DC power conversion. In this article, we will discuss the application field and working principle of the BUK7880-55A/CUX.The BUK7880-55A/CUX is an ideal solution for automotive applications where efficiency and space savings must be achieved. The device offers a wide operating voltage range of up to 100V, high drain saturation current up to 40A, and low on-resistance of 7mΩ. The device also features a low gate capacitance of 30pF and fast switching speeds of up to 10ns. These features make the device well suited for applications such as high current protection circuits, synchronous switching circuits, and low-side switch circuits.The BUK7880-55A/CUX is a vertical MOSFET, which means that the source, drain and body are independent terminals of the device. The source and drain regions have an insulated gate structure, formed by a lightly doped narrow strip of n-type material. A positive gate voltage applied to this strip forms an inversion layer and causes current to flow between the source and drain regions. The device exhibits an ON resistance of 7 mΩ and a current capability of 40A, which is significantly higher than traditional power MOSFETs.The BUK7880-55A/CUX employs an advanced design technique known as the PowerFET design. This design combines a large number of very small cells in order to create the desired properties in the device. The small cells are arranged in an array, which increases the current density in the device and reduces the on-resistance. This technique also improves the switching speed, thermal stability, and power dissipation of the device. As such, the BUK7880-55A/CUX is an excellent choice for automotive applications where power efficiency and fast switching speed are required.In summary, the BUK7880-55A/CUX is an n-channel enhancement mode power field effect transistor (FET) designed for automotive applications where power MOSFETs have been traditionally used. The device offers a wide operating voltage range, high drain saturation current, low on-resistance, and low gate capacitance. It is suitable for applications such as high voltage, high speed switching, synchronous rectification, and DC/DC power conversion. The device also features an advanced PowerFET design, which improves its efficiency and switching speed.
The specific data is subject to PDF, and the above content is for reference
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