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Search Result:resistor parallel

 --2997 Item(s) In Category:Transistors - Bipolar (BJT) - Single, Pre-Biased

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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
DTA143EEBHZGTL DTA143EEBHZGTLT
R-ND		 DTA143EEBHZGTL ROHM Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 250MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: EMT3F (SOT-416FL)
3000
Order

3000+:

$0.0236

 DTA143EEBHZGTLTR-ND Datasheet
MUN2135T1G MUN2135T1G-ND MUN2135T1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 230mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SC-59-3
1000
Order

15000+:

$0.0149

 MUN2135T1G-ND Datasheet
PDTA113EM,315 PDTA113EM,315-N
D		 PDTA113EM,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: DFN1006-3
 Base Part Number: PDTA113
1000
Order

10000+:

$0.0209

 PDTA113EM,315-ND Datasheet
UNR9111J0L UNR9111J0LTR-ND UNR9111J0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F1
1000
Order

--

 UNR9111J0LTR-ND Datasheet
PDTA144EE,115 568-11239-2-ND PDTA144EE,115 NXP USA Inc
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75
 Base Part Number: PDTA144
1000
Order

1+:

$0

 568-11239-2-ND Datasheet
DTC143EET1 DTC143EET1-ND DTC143EET1 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75, SOT-416
 Base Part Number: DTC143
1000
Order

1+:

$0

 DTC143EET1-ND Datasheet
RN2109CT(TPL3) RN2109CT(TPL3)T
R-ND		 RN2109CT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 50mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN2109CT(TPL3)TR-ND Datasheet
DTA123YCAHZGT116 DTA123YCAHZGT11
6TR-ND		 DTA123YCAHZGT11
6		 ROHM Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 250MHz
 Power - Max: 350mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: SST3
1000
Order

3000+:

$0.0202

 DTA123YCAHZGT116TR-ND Datasheet
MUN2230T1G MUN2230T1G-ND MUN2230T1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 338mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: SC-59
1000
Order

15000+:

$0.0162

 MUN2230T1G-ND Datasheet
NSBC144EF3T5G NSBC144EF3T5G-N
D		 NSBC144EF3T5G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 254mW
 Mounting Type: Surface Mount
 Package / Case: SOT-1123
 Supplier Device Package: SOT-1123
 Base Part Number: NSBC1*
1000
Order

8000+:

$0.0414

 NSBC144EF3T5G-ND Datasheet
PDTD113ZUX PDTD113ZUX-ND PDTD113ZUX Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 225MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SOT-323-3
1000
Order

3000+:

$0.0423

 PDTD113ZUX-ND Datasheet
RN2422TE85LF RN2422TE85LF-ND RN2422TE85LF Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 800mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: S-Mini
1000
Order

3000+:

$0.0595

 RN2422TE85LF-ND Datasheet
UNR521400L UNR521400LTR-ND UNR521400L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SMini3-G1
1000
Order

--

 UNR521400LTR-ND Datasheet
FJNS4214RTA FJNS4214RTA-ND FJNS4214RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS4214RTA-ND Datasheet
UNR211F00L UNR211F00LTR-ND UNR211F00L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: Mini3-G1
1000
Order

1+:

$0

 UNR211F00LTR-ND Datasheet
DTA123JET1G DTA123JET1G-ND DTA123JET1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75, SOT-416
 Base Part Number: DTA123
1000
Order

--

 DTA123JET1G-ND Datasheet
PDTA124EE,115 PDTA124EE,115-N
D		 PDTA124EE,115 NXP USA Inc
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75
 Base Part Number: PDTA124
1000
Order

1+:

$0

 PDTA124EE,115-ND Datasheet
PDTA143EQAZ PDTA143EQAZ-ND PDTA143EQAZ Nexperia USA Inc.
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 180MHz
 Power - Max: 280mW
 Mounting Type: Surface Mount
 Package / Case: 3-XDFN Exposed Pad
 Supplier Device Package: DFN1010D-3
1000
Order

5000+:

$0.0251

 PDTA143EQAZ-ND Datasheet
PDTB143XUF PDTB143XUF-ND PDTB143XUF Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 140MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SOT-323-3
1000
Order

10000+:

$0.0339

 PDTB143XUF-ND Datasheet
UNR222400L UNR222400LTR-ND UNR222400L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: Mini3-G1
1000
Order

1+:

$0

 UNR222400LTR-ND Datasheet
RN1102ACT(TPL3) RN1102ACT(TPL3)
TR-ND		 RN1102ACT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 80mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN1102ACT(TPL3)TR-ND Datasheet
RN2108MFV,L3F RN2108MFVL3F-ND RN2108MFV,L3F Toshiba Semiconductor and Storage
View more  Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: VESM
1000
Order

8000+:

$0.0198

 RN2108MFVL3F-ND Datasheet
DTC113EM3T5G DTC113EM3T5G-ND DTC113EM3T5G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 260mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: SOT-723
1000
Order

--

 DTC113EM3T5G-ND Datasheet
PDTC114YE,115 568-11056-2-ND PDTC114YE,115 NXP USA Inc
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75
 Base Part Number: PDTC114
1000
Order

1+:

$0

 568-11056-2-ND Datasheet
MUN5114T1 MUN5114T1OSCT-N
D		 MUN5114T1 ON Semiconductor
View more  Packaging: Cut Tape (CT)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 202mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SC-70-3 (SOT323)
 Base Part Number: MUN51**T
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 MUN5114T1OSCT-ND Datasheet
PDTB113ZQAZ PDTB113ZQAZ-ND PDTB113ZQAZ Nexperia USA Inc.
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 325mW
 Mounting Type: Surface Mount
 Package / Case: 3-XDFN Exposed Pad
 Supplier Device Package: DFN1010D-3
1000
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5000+:

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 PDTB113ZQAZ-ND Datasheet
PDTA114EMB,315 PDTA114EMB,315-
ND		 PDTA114EMB,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 180MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 3-XFDFN
 Supplier Device Package: 3-DFN1006B (0.6x1)
 Base Part Number: PDTA114
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 PDTA114EMB,315-ND Datasheet
PDTA115EMB,315 PDTA115EMB,315-
ND		 PDTA115EMB,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 20mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 100 kOhms
 Resistor - Emitter Base (R2): 100 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 180MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 3-XFDFN
 Supplier Device Package: 3-DFN1006B (0.6x1)
 Base Part Number: PDTA115
1000
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10000+:

$0.0533

 PDTA115EMB,315-ND Datasheet
UNR521100L UNR521100LTR-ND UNR521100L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SMini3-G1
1000
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 UNR521100LTR-ND Datasheet
UNR911TJ0L UNR911TJ0LTR-ND UNR911TJ0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F1
1000
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 UNR911TJ0LTR-ND Datasheet
FJX4005RTF FJX4005RTF-ND FJX4005RTF ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SOT-323
1000
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1+:

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 FJX4005RTF-ND Datasheet
BCR 103F E6327 BCR103FE6327-ND BCR 103F E6327 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Discontinued at Digi-Key
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 140MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: PG-TSFP-3
1000
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 BCR103FE6327-ND Datasheet
MMUN2136LT1G MMUN2136LT1G-ND MMUN2136LT1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 100 kOhms
 Resistor - Emitter Base (R2): 100 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 246mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: SOT-23 (TO-236AB)
1000
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15000+:

$0.0132

 MMUN2136LT1G-ND Datasheet
ADTC114EUAQ-7 ADTC114EUAQ-7-N
D		 ADTC114EUAQ-7 Diodes Incorporated
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 Frequency - Transition: 250MHz
 Power - Max: 330mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SOT-323
1000
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3000+:

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 ADTC114EUAQ-7-ND Datasheet
NSVDTA143EM3T5G NSVDTA143EM3T5G
-ND		 NSVDTA143EM3T5G ON Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 260mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: SOT-723
1000
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8000+:

$0.032

 NSVDTA143EM3T5G-ND Datasheet
PDTD143XQAZ PDTD143XQAZ-ND PDTD143XQAZ Nexperia USA Inc.
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 210MHz
 Power - Max: 325mW
 Mounting Type: Surface Mount
 Package / Case: 3-XDFN Exposed Pad
 Supplier Device Package: DFN1010D-3
1000
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5000+:

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 PDTD143XQAZ-ND Datasheet
DTB513ZMT2L DTB513ZMT2L-ND DTB513ZMT2L ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 12V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 260MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: VMT3
 Base Part Number: DTB513
1000
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8000+:

$0.0512

 DTB513ZMT2L-ND Datasheet
DTB723YETL DTB723YETL-ND DTB723YETL ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Not For New Designs
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 200mA
 Voltage - Collector Emitter Breakdown (Max): 30V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 260MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: EMT3
1000
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3000+:

$0.0558

 DTB723YETL-ND Datasheet
PDTC144WE,115 568-2171-2-ND PDTC144WE,115 NXP USA Inc
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75
 Base Part Number: PDTC144
1000
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 568-2171-2-ND Datasheet
UNR222100L UNR222100LTR-ND UNR222100L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: Mini3-G1
1000
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 UNR222100LTR-ND Datasheet
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