UNR412400A Discrete Semiconductor Products

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Transistors - Bipolar (BJT) - Single, Pre-Biased

The UNR412400A is a pre-biased, low voltage n-channel metal oxide semiconductor field-effect transistor (MOSFET), which is in a dual-inline package (DIP). It is commonly used in intermediate power applications, such as audio amplifiers and motor control circuits. The UNR412400A is suitable for DC applications in the range of -65V to +65V and has a peak Pd (dissipation power) rating of 11W.

Working Principle

The UNR412400A operates as an enhancement-type MOSFET, meaning it has an “on-state” region in which a current can pass through the channel. Its construction consists of an insulated gate, a semiconductor channel and two terminals called the drain and the source. A controlling voltage is applied to the gate, which creates a field that induces an electric charge in the semiconductor channel and modulates the conductivity of the channel, thus controlling the flow of current.

When the gate voltage of the UNR412400A is above its threshold voltage, the transistor is activated and current can flow from the source to the drain. In this mode, the transistor is said to be “on” and can draw power. Conversely, when the gate voltage is below the threshold voltage, the transistor is said to be “off” and no current can flow.

Application Fields

The UNR412400A has various application fields in which it can be used. One such application is as an audio amplifier. Because of its low voltage Pd rating and high current gains, it can be used as a low-noise amplifier with excellent performance.

It can also be used in motor control circuits, as it has a wide range of the gate voltage and can be used for the reversible control of conventional motors. Additionally, the UNR412400A can be used in switching circuits, such as H-bridge circuits, as it allows for the switching of loads with minimal losses. Its low Pd rating also means it can be used as a low-power switch.

The UNR412400A is also suitable for use in DC-DC converter circuits where a highly efficient, low-noise output is required. Its low Pd rating and low input capacitance allows it to have a fast turn-on and turn-off time, making it an ideal choice for such applications.

Conclusion

The UNR412400A is a pre-biased, low voltage n-channel MOSFET, which is suitable for applications in the range of -65V to +65V and has a peak Pd rating of 11W. It can be used in various applications, such as audio amplifiers, motor control circuits, switching circuits and DC-DC converter circuits. With its low input capacitance and low Pd rating, it is an ideal choice for these applications.

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