UNR521FG0L

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	150MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SC-85
Supplier Device Package:	SMini3-F2

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UNR521FG0L is a single pre-biased bipolar junction transistor (BJT). It is designed to provide high current and wide voltage range while maintaining low voltage drop and minimal power dissipation. This makes it ideal for many different applications, including power converters, motor driven applications, and various other high-power applications.The basic structure of BJT transistors consists of three layers of semiconductor material. These are the emitter, base, and collector. The emitter provides majority of the current, while the base and collector control the current flow between them. To understand the working principle of a BJT transistor, it is important to understand the basic physics of semiconductors. Semiconductor materials such as silicon, germanium, or gallium arsenide are made up of two distinct layers, a "N-type" layer which is negatively charged and the "P-type" layer which is positively charged. The interface between these two layers, known as the PN junction is where the BJT components, in this case the emitter, base and collector, are located.When voltage is applied to the emitter, it creates a depletion region in the PN junction. This depletion region consists of a region with no charge carriers, or those electrons that are able to be attracted to the junction. Electrons from the N-type layer are pulled over to the P-type layer, further deepening the depletion region. As a result, a potential barrier is created at the PN junction which is known as the base-emitter voltage. This voltage is a result of the potential difference between the P-type and N-type layers. Additionally, the current flow within the base-emitter of the BJT is known as the "emitter current". The magnitude of the current will be determined by the magnitude of the applied voltage.The current sent through the emitter will generate a current flow through the base-collector junction, known as the "collector current", thus allowing current to flow from the collector to the emitter. The magnitude of this collector current is proportional to the emitter current and can be adjusted by altering the voltage applied to the emitter. This process is known as the "bias current". The higher the base-emitter voltage, the higher the current can be transmitted through the base-collector junction. As a result, UNR521FG0L transistors can be used to generate high current and wide range voltages while maintaining low voltage drop and minimal power dissipation. Furthermore, UNR521FG0L transistors are also known for their high gain properties. The gain of a BJT transistor is given by the ratio between the collector current and the base current and can be adjusted by altering the base-emitter current. It is advantageous for applications that require high gain such as amplifiers and power supplies. In conclusion, UNR521FG0L transistors offer a wide range of benefits for many different applications. It provides high current and wide voltage range with low voltage drop and minimal power dissipation. It also has high gain properties which makes it ideal for amplifiers and power supplies. Due to its various advantages, UNR521FG0L transistors are widely used in power converters, motor driven applications and various other high-power applications.

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