UNR211400L Allicdata Electronics

UNR211400L Discrete Semiconductor Products

Allicdata Part #:

UNR211400LTR-ND

Manufacturer Part#:

UNR211400L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR211400L datasheetUNR211400L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Description

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The UNR211400L is a high-voltage, high-speed, pre-biased, single bipolar junction transistor (BJT) designed for use in power circuits and in noisy environments. It is designed to provide improved electrical performance in high-voltage applications, such as high voltage switch mode power supplies, motor driver applications, and battery operated applications. It is also used in hybrid circuits where a combination of high frequency AC and high current DC is needed.

The UNR211400L features a high system voltage rating of 400V, a high integration level, and a high-speed switching response. This device is also highly rugged, making it resistant to magnetic fields, EMI/RFI, and even extreme temperatures. This makes the UNR211400L an ideal transistor for high-voltage applications.

The UNR211400L operates in two main modes: linear and saturated. The linear region is used to amplify or decrease the signal, while the saturated region is used for switching operations. In linear mode, the collector current is modulated by the input current, resulting in an amplified signal. In saturated mode, the collector current is the same as the base current, so the signal is not amplified, but rather simply switched on or off.

The UNR211400L also contains a diode-connected emitter-base circuit, which helps to protect against voltage spikes. This feature is commonly referred to as pre-biasing, as it helps to significantly improve the device\'s reliability and provide a more consistent performance.

The UNR211400L is an ideal choice for a variety of power applications, such as switchmode power supplies, motor drivers, and battery-operated circuits. It is also suitable for use in a variety of other applications, such as medical, industrial, and automotive applications. The device is available in both surface mount and through-hole packages, allowing for flexibility in design and assembly.

In summary, the UNR211400L is a high-voltage and high-speed pre-biased single bipolar junction transistor designed for use in switchmode power supplies, motor driver applications, and battery operated applications. It offers excellent electrical performance and high-reliability, making it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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