UNR221K00L Discrete Semiconductor Products |
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Allicdata Part #: | UNR221K00LTR-ND |
Manufacturer Part#: |
UNR221K00L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR221K00L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Mini3-G1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR221K00L is a single pre-biased bipolar junction transistor (BJT) designed for a wide range of applications. It has a versatile feature set that offers both AC and DC current gain, making it suitable for a variety of applications. The UNR221K00L is used in many digital and analog circuits and is particularly useful in linear power amplifiers, logic circuits, and low-frequency analog signal processing.
The UNR221K00L is composed of three separate components: the emitter, the collector, and the base. The emitter is responsible for producing a current flow rate, while the collector is used to collect the current. The base is responsible for controlling the current flow rate between the emitter and collector. It is this base-emitter-collector (BEC) configuration that makes up the transistor’s working principle.
The most important factor of the working principle is the size of the gap between the base-emitter and the collector. This gap determines the amount of current that the transistor can pass. A larger gap allows for more current flow, while a smaller gap will have a limited current flow rate. This gap is referred to as the base width.
The UNR221K00L is typically pre-biased before being used in a circuit. This means that the base width is already set to the desired current passing capacity. This reduces the need to manually adjust the base width, saving time and money in the design process. Additionally, the pre-biasing process increases the performance of the transistor and increases its reliability.
The UNR221K00L is primarily used in circuits that need an amplified, regulated amount of current passing through them. This is typically in the form of linear power amplifiers, logic circuits, and low-frequency analog signal processing applications. The versatility of the transistor makes it suitable for a wide range of applications, from the low end of audio amplifiers to the high end of analog signal processors.
The UNR221K00L is a great choice for any application that requires an amplified, regulated amount of current passing through it. It is a reliable, pre-biased single bipolar junction transistor that is suitable for applications that require linear power amplifiers, logic circuits, and low-frequency analog signal processing. The UNR221K00L is a great addition to any circuit and is sure to provide reliable performance.
The specific data is subject to PDF, and the above content is for reference
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UNR221D00L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 200MW M... |
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