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Search Result:resistor parallel

 --1504 Item(s) In Category:Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
NSBC114TDXV6T5 NSBC114TDXV6T5O
S-ND		 NSBC114TDXV6T5 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 500mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SOT-563
 Base Part Number: NSBC1*
1000
Order

1+:

$0

 NSBC114TDXV6T5OS-ND Datasheet
IMH14AT108 IMH14AT108TR-ND IMH14AT108 ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Not For New Designs
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SMT6
 Base Part Number: *MH14
3000
Order

3000+:

$0.0971

6000+:

$0.0913

15000+:

$0.0854

30000+:

$0.0785

 IMH14AT108TR-ND Datasheet
XN0411600L XN0411600LTR-ND XN0411600L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SOT-23-6
 Supplier Device Package: MINI6-G1
1000
Order

1+:

$0

 XN0411600LTR-ND Datasheet
PEMB30,315 PEMB30,315-ND PEMB30,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SOT-666
 Base Part Number: MB30
1000
Order

8000+:

$0.0372

 PEMB30,315-ND Datasheet
XN0121000L XN0121000LTR-ND XN0121000L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: Mini5-G1
1000
Order

1+:

$0

 XN0121000LTR-ND Datasheet
NSBA114TDXV6T1 NSBA114TDXV6TOS
TR-ND		 NSBA114TDXV6T1 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 500mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SOT-563
 Base Part Number: NSBA1*
1000
Order

1+:

$0

 NSBA114TDXV6TOSTR-ND Datasheet
RN1602(TE85L,F) RN1602(TE85LF)T
R-ND		 RN1602(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SM6
1000
Order

1+:

$0

 RN1602(TE85LF)TR-ND Datasheet
FMG4AT148 FMG4AT148TR-ND FMG4AT148 ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: SMT5
 Base Part Number: *MG4
3000
Order

--

 FMG4AT148TR-ND Datasheet
NSBC114EDP6T5G NSBC114EDP6T5GO
STR-ND		 NSBC114EDP6T5G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 408mW
 Mounting Type: Surface Mount
 Package / Case: SOT-963
 Supplier Device Package: SOT-963
 Base Part Number: NSBC1*
8000
Order

8000+:

$0.0497

16000+:

$0.0441

24000+:

$0.0414

56000+:

$0.0368

 NSBC114EDP6T5GOSTR-ND Datasheet
NSBA114EDP6T5G NSBA114EDP6T5G-
ND		 NSBA114EDP6T5G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 338mW
 Mounting Type: Surface Mount
 Package / Case: SOT-963
 Supplier Device Package: SOT-963
 Base Part Number: NSBA1*
1000
Order

8000+:

$0.0414

 NSBA114EDP6T5G-ND Datasheet
NSBA124XDXV6T1G NSBA124XDXV6T1G
-ND		 NSBA124XDXV6T1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 500mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SOT-563
1000
Order

4000+:

$0.0655

 NSBA124XDXV6T1G-ND Datasheet
RN1706JE(TE85L,F) RN1706JE(TE85LF
)CT-ND		 RN1706JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Cut Tape (CT)
 Part Status: Discontinued at Digi-Key
 Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
5
Order

1+:

$0.3591

 RN1706JE(TE85LF)CT-ND Datasheet
RN2963FE(TE85L,F) RN2963FE(TE85LF
)TR-ND		 RN2963FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN2963FE(TE85LF)TR-ND Datasheet
UP0421300L UP0421300LTR-ND UP0421300L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SSMINI6-F1
1000
Order

1+:

$0

 UP0421300LTR-ND Datasheet
XN0111600L XN0111600LTR-ND XN0111600L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: Mini5-G1
1000
Order

1+:

$0

 XN0111600LTR-ND Datasheet
IMH24T110 IMH24T110-ND IMH24T110 ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Not For New Designs
 Transistor Type: 2 NPN Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 600mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 2.5mA
 Current - Collector Cutoff (Max): 500nA (ICBO)
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SMT6
1000
Order

3000+:

$0.0991

 IMH24T110-ND Datasheet
RN1702JE(TE85L,F) RN1702JE(TE85LF
)TR-ND		 RN1702JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
4000
Order

4000+:

$0.0556

 RN1702JE(TE85LF)TR-ND Datasheet
UP04214G0L UP04214G0LTR-ND UP04214G0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SSMini6-F2
8000
Order

--

 UP04214G0LTR-ND Datasheet
RN2911FE(TE85L,F) RN2911FE(TE85LF
)TR-ND		 RN2911FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN2911FE(TE85LF)TR-ND Datasheet
IMB4AT110 IMB4AT110TR-ND IMB4AT110 ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Not For New Designs
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74, SOT-457
 Supplier Device Package: SMT6
 Base Part Number: MB4
1000
Order

--

 IMB4AT110TR-ND Datasheet
NSBA143TDXV6T1 NSBA143TDXV6TOS
TR-ND		 NSBA143TDXV6T1 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 500mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SOT-563
 Base Part Number: NSBA1*
1000
Order

1+:

$0

 NSBA143TDXV6TOSTR-ND Datasheet
EMD62T2R EMD62T2RTR-ND EMD62T2R ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: EMT6
1000
Order

--

 EMD62T2RTR-ND Datasheet
DDA113TU-7-F DDA113TU-7-FDIT
R-ND		 DDA113TU-7-F Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SOT-363
1000
Order

1+:

$0

 DDA113TU-7-FDITR-ND Datasheet
XN0121300L XN0121300LTR-ND XN0121300L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: Mini5-G1
1000
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1+:

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 XN0121300LTR-ND Datasheet
NSVB124XPDXV6T1G NSVB124XPDXV6T1
G-ND		 NSVB124XPDXV6T1
G		 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 500mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SOT-563
1000
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1+:

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 NSVB124XPDXV6T1G-ND Datasheet
RN2902FE,LF(CT RN2902FELF(CTTR
-ND		 RN2902FE,LF(CT Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

4000+:

$0.0304

 RN2902FELF(CTTR-ND Datasheet
RN2902FE(T5L,F,T) RN2902FE(T5LFT)
TR-ND		 RN2902FE(T5L,F,
T)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN2902FE(T5LFT)TR-ND Datasheet
PUMH14,115 PUMH14,115-ND PUMH14,115 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: 6-TSSOP
1000
Order

3000+:

$0.0379

 PUMH14,115-ND Datasheet
NSVBC114EPDXV6T1G NSVBC114EPDXV6T
1G-ND		 NSVBC114EPDXV6T
1G		 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 500mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: SOT-563
1000
Order

4000+:

$0.072

 NSVBC114EPDXV6T1G-ND Datasheet
RN2911,LF RN2911LFTR-ND RN2911,LF Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: US6
3000
Order

3000+:

$0.032

 RN2911LFTR-ND Datasheet
RN1970(TE85L,F) RN1970(TE85LF)T
R-ND		 RN1970(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: US6
3000
Order

3000+:

$0.0556

 RN1970(TE85LF)TR-ND Datasheet
RN2710JE(TE85L,F) RN2710JE(TE85LF
)TR-ND		 RN2710JE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-553
 Supplier Device Package: ESV
1000
Order

1+:

$0

 RN2710JE(TE85LF)TR-ND Datasheet
PUMH15,115 1727-1981-2-ND PUMH15,115 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: 6-TSSOP
1000
Order

3000+:

$0.0397

6000+:

$0.0345

15000+:

$0.0293

30000+:

$0.0276

75000+:

$0.0259

 1727-1981-2-ND Datasheet
PUMH24,115 PUMH24,115-ND PUMH24,115 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 20mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 100 kOhms
 Resistor - Emitter Base (R2): 100 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: 6-TSSOP
1000
Order

3000+:

$0.0379

 PUMH24,115-ND Datasheet
PUMB20,115 PUMB20,115-ND PUMB20,115 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: 6-TSSOP
1000
Order

3000+:

$0.0412

 PUMB20,115-ND Datasheet
NSBA115TDP6T5G NSBA115TDP6T5G-
ND		 NSBA115TDP6T5G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 100 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 408mW
 Mounting Type: Surface Mount
 Package / Case: SOT-963
 Supplier Device Package: SOT-963
 Base Part Number: NSBA1*
1000
Order

8000+:

$0.0677

 NSBA115TDP6T5G-ND Datasheet
XP0621600L XP0621600LTR-ND XP0621600L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SMINI6-G1
1000
Order

1+:

$0

 XP0621600LTR-ND Datasheet
RN1967FE(TE85L,F) RN1967FE(TE85LF
)TR-ND		 RN1967FE(TE85L,
F)		 Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-563, SOT-666
 Supplier Device Package: ES6
1000
Order

1+:

$0

 RN1967FE(TE85LF)TR-ND Datasheet
PUMD2/DG/B3,115 PUMD2/DG/B3,115
-ND		 PUMD2/DG/B3,115 Nexperia USA Inc.
View more  Part Status: Obsolete
 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA
 Frequency - Transition: 230MHz, 180MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: 6-TSSOP, SC-88, SOT-363
 Supplier Device Package: SOT-363
1000
Order

1+:

$0

 PUMD2/DG/B3,115-ND Datasheet
RN1507(TE85L,F) RN1507(TE85LF)T
R-ND		 RN1507(TE85L,F) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: 2 NPN - Pre-Biased (Dual)
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-74A, SOT-753
 Supplier Device Package: SMV
1000
Order

1+:

$0

 RN1507(TE85LF)TR-ND Datasheet
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