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 --2997 Item(s) In Category:Transistors - Bipolar (BJT) - Single, Pre-Biased

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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
DTA143XETL DTA143XETLTR-ND DTA143XETL ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: EMT3
 Base Part Number: DTA143
1000
Order

--

 DTA143XETLTR-ND Datasheet
RN1102T5LFT RN1102T5LFTTR-N
D		 RN1102T5LFT Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SSM
 Base Part Number: RN110*
1000
Order

1+:

$0

 RN1102T5LFTTR-ND Datasheet
DTA124XET1G DTA124XET1G-ND DTA124XET1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75
1000
Order

15000+:

$0.0152

 DTA124XET1G-ND Datasheet
NSVDTA115EET1G NSVDTA115EET1G-
ND		 NSVDTA115EET1G ON Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 100 kOhms
 Resistor - Emitter Base (R2): 100 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75, SOT-416
1000
Order

6000+:

$0.0388

 NSVDTA115EET1G-ND Datasheet
FJN3313RBU FJN3313RBU-ND FJN3313RBU ON Semiconductor
View more  Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 (TO-226AA)
 Supplier Device Package: TO-92-3
1000
Order

1+:

$0

 FJN3313RBU-ND Datasheet
RN2102ACT(TPL3) RN2102ACT(TPL3)
TR-ND		 RN2102ACT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 80mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN2102ACT(TPL3)TR-ND Datasheet
DTA043ZEBTL DTA043ZEBTLTR-N
D		 DTA043ZEBTL ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 5mA
 Frequency - Transition: 250MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: EMT3F (SOT-416FL)
1000
Order

--

 DTA043ZEBTLTR-ND Datasheet
DTC024XUBTL DTC024XUBTLTR-N
D		 DTC024XUBTL ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-85
 Supplier Device Package: UMT3F
1000
Order

3000+:

$0.0246

6000+:

$0.0214

15000+:

$0.0182

30000+:

$0.0171

75000+:

$0.0161

150000+:

$0.0143

 DTC024XUBTLTR-ND Datasheet
PDTA144VM,315 PDTA144VM,315-N
D		 PDTA144VM,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: DFN1006-3
 Base Part Number: PDTA144
1000
Order

10000+:

$0.0209

 PDTA144VM,315-ND Datasheet
ADTA114EUAQ-7 ADTA114EUAQ-7-N
D		 ADTA114EUAQ-7 Diodes Incorporated
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 Frequency - Transition: 250MHz
 Power - Max: 330mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SOT-323
1000
Order

3000+:

$0.0253

 ADTA114EUAQ-7-ND Datasheet
PDTD113ZQAZ PDTD113ZQAZ-ND PDTD113ZQAZ Nexperia USA Inc.
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 210MHz
 Power - Max: 325mW
 Mounting Type: Surface Mount
 Package / Case: 3-XDFN Exposed Pad
 Supplier Device Package: DFN1010D-3
1000
Order

5000+:

$0.0336

 PDTD113ZQAZ-ND Datasheet
PDTD123YUF PDTD123YUF-ND PDTD123YUF Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 225MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SOT-323-3
1000
Order

10000+:

$0.0339

 PDTD123YUF-ND Datasheet
UNR911FJ0L UNR911FJ0LTR-ND UNR911FJ0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F1
1000
Order

1+:

$0

 UNR911FJ0LTR-ND Datasheet
BCR 164F E6327 BCR164FE6327-ND BCR 164F E6327 Infineon Technologies
View more  Packaging: Tape & Reel (TR)
 Part Status: Discontinued at Digi-Key
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 160MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: PG-TSFP-3
1000
Order

1+:

$0

 BCR164FE6327-ND Datasheet
DTA143ZEBHZGTL DTA143ZEBHZGTLT
R-ND		 DTA143ZEBHZGTL ROHM Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Frequency - Transition: 250MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: EMT3F (SOT-416FL)
3000
Order

3000+:

$0.0219

 DTA143ZEBHZGTLTR-ND Datasheet
DTC123JUBHZGTL DTC123JUBHZGTLT
R-ND		 DTC123JUBHZGTL ROHM Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased + Diode
 Current - Collector (Ic) (Max): 100mA
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-85
 Supplier Device Package: UMT3F
3000
Order

3000+:

$0.0236

 DTC123JUBHZGTLTR-ND Datasheet
RN2103ACT(TPL3) RN2103ACT(TPL3)
TR-ND		 RN2103ACT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 80mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
10000
Order

10000+:

$0.0328

 RN2103ACT(TPL3)TR-ND Datasheet
DTC114YCAHZGT116 DTC114YCAHZGT11
6TR-ND		 DTC114YCAHZGT11
6		 ROHM Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased + Diode
 Current - Collector (Ic) (Max): 100mA
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Frequency - Transition: 250MHz
 Power - Max: 350mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: SST3
1000
Order

3000+:

$0.0186

 DTC114YCAHZGT116TR-ND Datasheet
DTA114YCAT116 DTA114YCAT116TR
-ND		 DTA114YCAT116 ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: SST3
1000
Order

3000+:

$0.0251

6000+:

$0.0218

15000+:

$0.0186

30000+:

$0.0175

75000+:

$0.0164

150000+:

$0.0146

 DTA114YCAT116TR-ND Datasheet
DTA024EUBTL DTA024EUBTLTR-N
D		 DTA024EUBTL ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 30mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 5mA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-85
 Supplier Device Package: UMT3F
1000
Order

3000+:

$0.0289

6000+:

$0.0251

15000+:

$0.0214

30000+:

$0.0201

75000+:

$0.0189

150000+:

$0.0168

 DTA024EUBTLTR-ND Datasheet
PDTC114EM,315 PDTC114EM,315-N
D		 PDTC114EM,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: DFN1006-3
 Base Part Number: PDTC114
1000
Order

10000+:

$0.0209

 PDTC114EM,315-ND Datasheet
PDTA123EMB,315 PDTA123EMB,315-
ND		 PDTA123EMB,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 180MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 3-XFDFN
 Supplier Device Package: 3-DFN1006B (0.6x1)
 Base Part Number: PDTA123
1000
Order

10000+:

$0.0533

 PDTA123EMB,315-ND Datasheet
FJN4306RBU FJN4306RBU-ND FJN4306RBU ON Semiconductor
View more  Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 (TO-226AA)
 Supplier Device Package: TO-92-3
1000
Order

1+:

$0

 FJN4306RBU-ND Datasheet
MUN2237T1G MUN2237T1GOS-ND MUN2237T1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 338mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: SC-59
1000
Order

--

 MUN2237T1GOS-ND Datasheet
DTA143EM3T5G DTA143EM3T5GOST
R-ND		 DTA143EM3T5G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 260mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: SOT-723
 Base Part Number: DTA143
1000
Order

16000+:

$0.0185

 DTA143EM3T5GOSTR-ND Datasheet
PDTC143XEF,115 568-2163-2-ND PDTC143XEF,115 NXP USA Inc
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SC-89
 Base Part Number: DTC143
1000
Order

1+:

$0

 568-2163-2-ND Datasheet
FJNS3214RTA FJNS3214RTA-ND FJNS3214RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS3214RTA-ND Datasheet
FJNS4204RTA FJNS4204RTA-ND FJNS4204RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS4204RTA-ND Datasheet
RN1108CT(TPL3) RN1108CT(TPL3)T
R-ND		 RN1108CT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 50mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN1108CT(TPL3)TR-ND Datasheet
RN2402,LF RN2402LF-ND RN2402,LF Toshiba Semiconductor and Storage
View more  Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: S-Mini
1000
Order

3000+:

$0.0243

 RN2402LF-ND Datasheet
PDTB113EUF PDTB113EUF-ND PDTB113EUF Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 140MHz
 Power - Max: 300mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SOT-323-3
1000
Order

10000+:

$0.0339

 PDTB113EUF-ND Datasheet
DTC363EUT106 DTC363EUT106-ND DTC363EUT106 ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 600mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 6.8 kOhms
 Resistor - Emitter Base (R2): 6.8 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: UMT3
 Base Part Number: DTC363
1000
Order

1+:

$0

 DTC363EUT106-ND Datasheet
DTA114YET1 DTA114YET1OS-ND DTA114YET1 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75, SOT-416
 Base Part Number: DTA114
1000
Order

1+:

$0

 DTA114YET1OS-ND Datasheet
UNR92A8G0L UNR92A8G0LTR-ND UNR92A8G0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 80mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 510 Ohms
 Resistor - Emitter Base (R2): 5.1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F3
1000
Order

1+:

$0

 UNR92A8G0LTR-ND Datasheet
RN2118MFV(TPL3) RN2118MFV(TPL3)
TR-ND		 RN2118MFV(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: VESM
 Base Part Number: RN211*
1000
Order

1+:

$0

 RN2118MFV(TPL3)TR-ND Datasheet
PDTA124EU,135 PDTA124EU,135-N
D		 PDTA124EU,135 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SOT-323-3
 Base Part Number: PDTA124
1000
Order

10000+:

$0.0156

 PDTA124EU,135-ND Datasheet
RN2403,LF RN2403LF-ND RN2403,LF Toshiba Semiconductor and Storage
View more  Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: S-Mini
1000
Order

3000+:

$0.0243

 RN2403LF-ND Datasheet
PDTB143ETVL PDTB143ETVL-ND PDTB143ETVL Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 140MHz
 Power - Max: 320mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: TO-236AB (SOT23)
1000
Order

10000+:

$0.0318

 PDTB143ETVL-ND Datasheet
UNR221N00L UNR221N00LTR-ND UNR221N00L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: Mini3-G1
1000
Order

1+:

$0

 UNR221N00LTR-ND Datasheet
UNR422200A UNR422200ATB-ND UNR422200A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR422200ATB-ND Datasheet
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