Allicdata Part #: | UNR221N00LTR-ND |
Manufacturer Part#: |
UNR221N00L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR221N00L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Mini3-G1 |
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Bipolar junction transistors (BJTs) are three-terminal semiconductor devices that can be used as amplifying and switching devices. BJT transistors are used as switches, drivers, and amplifiers in many different types of circuits. Among the numerous types of BJT transistors, single, pre-biased UNR221N00L transistors offer several advantages when compared to other types. This article will discuss the application field and working principle of UNR221N00L bipolar junction transistors.
UNR221N00L bipolar junction transistors are designed specifically for applications requiring high level current gain with high input impedance. These transistors are most commonly used in applications such as control circuits, drive circuits,protection circuits, signal amplification, and switching circuits. They are often used in antenna switching circuits, signal detectors, signal generation circuits, audio amplifiers, gate drivers, power supplies, motor controllers, and DC-DC converters.
Single, pre-biased UNR221N00L bipolar junction transistors are Packaged in a conventional TO-220 package, the UNR221N00L offers a high level of output current and a high input impedance. It is a single device, with the two input pins connected together via a series resistor, and the output pin connected to the two input pins via a collector-emitter resistor. This provides a two-stage gain, known as pre-biasing, which allows for a higher level of amplification.
The UNR221N00L has a structured configuration of its collector-emitter junction, which allows it to operate in both unipolar (NPN) and bipolar (PNP) modes. This structure reduces the amount of current necessary to operate the device, allowing it to achieve a high level gain with low power consumption. In addition, the pre-biasing configuration imparts greater stability over a wide range of temperature and bias conditions.
At its most basic, the operation of the UNR221N00L resembles that of a conventional PNP or NPN transistor. When the base-emitter input voltage is within the device’s specifications, the device turns on and off depending on the voltage applied to the base electrodes. This produces an amplified signal at the collector-emitter junction, which can be used to drive larger loads. The device is typically used as an amplifier or as a switch.
The UNR221N00L has an extremely high input impedance, allowing it to operate with low-level current signals. Additionally, it has a relatively low noise figure, making it ideal for noise-sensitive applications. The device also has a high switching speed, making it well suited for digital circuits.
In summary, Single, pre-biased UNR221N00L bipolar junction transistors are widely used in many different types of applications due to their high level current gain and high input impedance. These transistors are often used to amplify or switch low-level current signals, and can be used in audio amplifiers, gate drivers, power supplies, motor controllers, and DC-DC converters. The UNR221N00L offers a high level of stability over a wide range of temperatures and bias conditions, and its low power consumption makes it an attractive option for many applications.
The specific data is subject to PDF, and the above content is for reference
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