UNR422200A Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	1µA
Frequency - Transition:	200MHz
Power - Max:	300mW
Mounting Type:	Through Hole
Package / Case:	NS-B1
Supplier Device Package:	NS-B1

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UNR422200A is a single pres-biased bipolar junction transistor (BJT) that has a wide range of applications. A BJT is a semiconductor device made up of three terminals: emitter, base, and collector. The function of a BJT is to amplify or switch electric signals. The UNR422200A is designed for obtaining accurate and reliable results in the most demanding applications, such as RF and amplifier circuits.The working principle of the UNR422200A is based on the basic design of a bipolar junction transistor. A BJT is constructed from two pn junctions that are connected to each other. When current is passed through the base-emitter terminal, it causes a small current to flow through the base to the collector terminal. This small current is multiplied by a factor known as the current gain (β). This process is commonly referred to as transistor current amplification.The key feature of the UNR422200A is that it is pre-biased, which means that the pn junction in the BJT is already partially opened. This allows the transistor to act as an amplifier even at low voltages. This feature is especially useful in RF and amplifier applications where low power consumption is important.In terms of its application field, the UNR422200A can be used in a wide range of circuits. It can be used to amplify audio signals in audio systems, to switch digital signals in computers, and to amplify AC signals in radio receiver circuits. Furthermore, it is commonly used in high-end audio and video systems, where its performance and reliability are essential.Apart from audio and video applications, the UNR422200A can also be used in RF and amplifier applications. In these applications, it is used to amplify or switch signals at frequencies ranging from low to high. Due to its low power consumption, it is ideal for these applications as it ensures greater efficiency and performance.The UNR422200A can be also used in power supply circuits. In these applications, it is used to regulate the voltage and current in the circuit. This ensures that the power supply circuit remains within its designed parameters, resulting in reliable and accurate performance.Overall, the UNR422200A is a high-performance single pres-biased bipolar junction transistor that has a wide range of applications. It is reliable, efficient, and offers excellent performance in the most demanding applications, making it the ideal choice for engineers and designers.

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