Allicdata Part #: | APT20N60BC3G-ND |
Manufacturer Part#: |
APT20N60BC3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 600V 20.7A TO-247 |
More Detail: | N-Channel 600V 20.7A (Tc) 208W (Tc) Through Hole T... |
DataSheet: | APT20N60BC3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 20.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 13.1A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2440pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 208W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
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The APT20N60BC3G is a N-Channel Power MOSFET that is manufactured by Infineon, a semiconductor company with its headquarters based in Neubiberg, Germany. The MOSFET is part of the Power MOS 8 family, which includes a variety of high-side and low-side power switches. The APT20N60BC3G is a low-side power switch, and is typically used in applications that require an effective and efficient switch in the control of current flow. This capability makes the MOSFET an ideal choice for applications such as circuit protection, power management in LED lighting systems, audio amplifiers, and a wide range of other power-control applications.
The APT20N60BC3G is a N-channel enhancement mode MOSFET, meaning that it has a non-conductive, depletion-mode layer between its source and drain terminals. The MOSFET is designed with a low on-resistance of 10 mΩ, making it highly efficient in its ability to control current flow. Moreover, its operation is fast, causing very minimal disruption to the circuit. The MOSFET is also designed with a maximum voltage of 60V and a maximum drain current of 60A, making it well-suited for a wide range of applications. Additionally, the MOSFET has an operating temperature range of -55°C up to 150°C, allowing it to be used in applications in a variety of environmental contexts.
The operation of the APT20N60BC3G MOSFET is based upon the threshold voltage, or VT. When the voltage applied to the gate is below the threshold voltage (VT), the MOSFET is in Off-state and no current flows through it. However, when the gate voltage is equal to or greater than the threshold voltage, then the MOSFET is in the On-state, allowing a current to flow through it. In this way, the MOSFET functions as an effective switch for controlling the current flow. Furthermore, when the voltage applied to the gate is increased, the amount of current that can flow through the MOSFET also increases. This allows for greater control over the current levels, making the MOSFET suitable for use in a variety of power-control applications.
In conclusion, the APT20N60BC3G is a N-Channel Power MOSFET which is designed for applications that require efficient and effective switch for controlling current flow. Its Low-on-Resistance makes it an ideal choice for a wide range of applications such as circuit protection, power management in LED lighting systems, and audio amplifiers. Additionally, its features – such as its maximum voltage and drain current as well as its operating temperatures range – are also quite useful in various applications. Furthermore, its operation is based upon its threshold voltage, which allows it to be easily used in various power-control applications.
The specific data is subject to PDF, and the above content is for reference
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