2SD20000P Allicdata Electronics
Allicdata Part #:

2SD20000P-ND

Manufacturer Part#:

2SD20000P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 60V 4A TO-220F
More Detail: Bipolar (BJT) Transistor NPN 60V 4A 80MHz 2W Throu...
DataSheet: 2SD20000P datasheet2SD20000P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-A1
Description

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Bipolar junction transistors (BJTs) are a type of three-terminal semiconductor device that can be used to amplify or switch signals. They are divided into two main categories: single- and double-base BJTs. Single-base Bipolar junction transistors (2SD20000P) are commonly used in analog and digital circuits for a variety of purposes. This article will provide an overview of the application field and working principle of 2SD20000P transistors.

General Description

2SD20000P is a single-base bipolar junction transistor that is typically used in switching and signal processing applications. It is able to operate in both common emitter (CE) and common collector (CC) configurations. This transistor is made using a silicon-based semiconductor and features a power dissipation of 750mW. It has a maximum rating of 30V and a collector-emitter breakdown voltage of 50V.

Application Field

2SD20000P transistors are commonly used for signal amplification, signal processing, switching and power switching applications. They are often used in audio amplifiers, mains powered switched-mode power supplies (PSUs), digital-to-analog (D/A) and analog-to-digital (A/D) converters, radio receiver circuits, and embedded systems. They are also suitable for use in low power digital and analog circuits.

Working Principle

2SD20000P transistors operate by controlling the amount of current that flows between the two connectors on either side of the base. By applying an external voltage to the base, the electrons in that region can be made to flow into the collector region. This flow of electrons creates a current that can be amplified or switched by adjusting the external base voltage.

The base voltage controls the amount of current flowing between the collector and emitter. A higher voltage creates a stronger electric field resulting in greater current flow. When the base voltage is reduced, the electric field weakens and the current decreases. As a result, the transistor can be used to precisely control the magnitude of current flowing along a circuit.

Advantages

2SD20000P transistors are widely used due to a range of their advantages. They feature a large current gain and relatively low power consumption. They are also available in a range of voltage configurations, allowing them to be used in both high and low voltage applications. Additionally, they feature a low input capacitance and high output impedance, making them suitable for applications that require rapid response.

Disadvantages

Transistors, in general, tend to suffer from low linearity due to the physical nature of their semiconductor junction. This means the current gain from base to collector is not linear with the base voltage, thus distorting the output signal. Moreover, the noise generated by transistors is usually higher than that from other semiconductor devices, reducing the signal fidelity of the output. Finally, the power dissipation of transistors, especially for large currents, can be relatively high.

Conclusion

2SD20000P transistors are commonly used in a wide range of digital and analog circuits. They are available in a range of voltage configurations, feature a large current gain and relatively low power consumption, have a low input capacitance, and have a high output impedance. However, they tend to suffer from low linearity and may generate more noise than other semiconductor devices.

The specific data is subject to PDF, and the above content is for reference

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