2SD21330SA

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2SD21330SA is a kind of transistor that falls into the category of Bipolar (BJT) and Single. Built with high purity silicon material, these transistors are both cost-effective and highly reliable. This can be attributed to its high power dissipation capability of 25W, maximum collector-base voltage of 400V and hFE rating of 70 to 90. Its application field covers devices such as voltage booster in television sets and stereo equipment, as well as functioning as horizontal output in televisions and monitors. Here is a deeper look into the application field and working principle of 2SD21330SA.

2SD21330SA is typically used for the voltage booster in various types of electronic equipment, such as the television sets and stereo equipment. The function of the booster is to convert and amplify the small, low-level signals from the amplifier to the level required for signals to be actuated on the display or output device. This allows for more efficient power output from smaller power sources. This transistor is also used as the horizontal output in televisions and computer monitors. This is an important part of the display circuitry, functioning to accurately draw the horizontal lines on the display device with proper horizontal and vertical sync. Both of these application for the 2SD21330SA is highly important and the stability of the transistor in this application is a major factor.

The working principle of 2SD21330SA involves a three-layer NPN bipolar base transistor, which uses a few layers of Silicon material and a few layers of metal oxide semiconductor. In this device, current can be passed through the Base Layer and the current that flows to the Base layer can be regulated by controlling the Voltage which enters the Base layer. The Base layer also helps control and regulate the current flow between the Emitter and Collector layers.The Emitter Layer is where current is emitted from, and the Collector Layer is where the current is collected to. This current-flow from Emitter to Collector is limited and regulated by the Voltage that enters the Base layer. Applying the adequate Base Voltage level will enable the efficient flow of electricity from the Emitter to the Collector.

2SD21330SA is also equipped with other features to enhance its capabilities and performance. It has an operating temperature range of -55C to 150C, which makes it suitable for use in a wide range of applications. The transistor utilizes a package size of ROHM TO-92L, which is small and can fit into tight spaces. 2SD21330SA also has a low leakage current when used with a low Collector-to-Base Voltage, making it a suitable power-saving device. This transistor is also extremely resistant to vibration and environmental shocks, making it the ideal choice for a variety of applications.

When it comes to 2SD21330SA, it is a highly reliable device that performs efficiently in its designated application field. Its usage of a high-quality Silicon material helps to boost its performance and stability, as well as its resistance to environmental factors, making it perfect for applications where conditions may be less than ideal. Additionally, its compact size and low leakage current helps to save power, making it a great choice for those who are looking for a simple but efficient power solution. 2SD21330SA is truly an effective transistor for a variety of applications.

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