2SD2144STPW

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The 2SD2144STPW is a high power silicon NPN power transistor. It is classified as a single bipolar junction transistor (BJT). The transistor is designed for use in linear mode, high speed power amplifier applications. It has a minimum DC current gain of 45, and can handle a maximum collector current of 6A. The 2SD2144STPW is a high power, PNP, complementary transistor.

The transistor\'s application field includes high frequency inverters, relay drivers, power amplifiers, and high current switching circuits. It is also used in audio power amplifiers, video signal processors, and signal relay circuits.

The working principle of a bipolar junction transistor (BJT) involves the formation of two junctions at the point where the base (B) and collector (C) terminals meet. When an elect and the base-emitter junction in the transistor is biased, it allows the collector current to flow. As the current flows, it produces an amplified signal that can be used in various applications. The current gain of the transistor is determined by the ratio of the emitter current (IE) to the collector current (IC). The 2SD2144STPW has a minimum current gain of 45, which indicates that the transistor will amplify a signal by at least 45 times.

The device is designed using advanced, high-temperature technology, which ensures high reliability and performance. The device\'s silicon chip contains integrated protection against short-circuiting, thermal protection, and a high voltage biased junction for improved switching performance. Additionally, the 2SD2144STPW is compliant with ISO/IEC/JIS international standards, making it suitable for a wide range of industrial and commercial applications.

In conclusion, the 2SD2144STPW is a high power, single bipolar junction transistor (BJT). It has a minimum DC current gain of 45, and can handle a maximum collector current of 6A. It is suitable for a wide range of applications, including high frequency inverters, relay drivers, power amplifiers, and high current switching circuits.

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