Allicdata Part #: | 2SD2142KT146TR-ND |
Manufacturer Part#: |
2SD2142KT146 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN DARL 30V 0.3A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 30V 300m... |
DataSheet: | 2SD2142KT146 Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10000 @ 100mA, 5V |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3 |
Base Part Number: | 2SD2142 |
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A 2SD2142KT146 bipolar junction transistor (BJT) is a type of transistor commonly used in electronic devices. It is a three-terminal device composed of two p-type semiconductor regions (called the base and the collector) and one n-type semiconductor region (called the emitter). It is commonly used as a switch or an amplifier in transistor circuits and is made from a variety of materials such as germanium and silicon.
The primary application of the 2SD2142KT146 is as a switching device. It generally works by turning on and off current that passes through it, much like a switch. When switched on, the emitter and collector will both carry current and this will cause the transistor to become more conductive, enabling the flow of current through the circuit. When switched off, the collector and emitter-base junction become non-conductive and current will not flow through the circuit.
The 2SD2142KT146 can also be used as an amplifier, as it is able to control the flow of current through a circuit in a more subtle way than a switch by allowing a smaller current to control a larger current. This is achieved by using a small current in the base to control the flow of a larger current in the emitter-collector circuit. This is known as current amplification.
The transistor is powered by a DC voltage source and the emitter-base junction is forward-biased (i.e. a voltage drop across the junction). This forward biasing creates a minority carrier inversion layer between the base and emitter, allowing electrons to move from the emitter to the collector. The size of the current from the emitter to the collector is determined by the current flowing from the base to the emitter.
The 2SD2142KT146 is a small signal, general-purpose BJT with an effective transconductance of 11.3mA/V at Ic = 100mA and Vce = 5V. It has a breakdown voltage rating of 180V and a continuous forward current of 1A. It is a versatile device that is suitable for a wide range of applications, including audio oscillators, timers, power amplifiers, and radio transmitters.
In conclusion, the 2SD2142KT146 is a versatile and widely used general-purpose transistor suitable for various applications. It can be used as a switch or an amplifier and its flexibility makes it a popular choice for many applications. The principles and workings of the 2SD2142KT146 as outlined above make it an important component in a variety of circuits.
The specific data is subject to PDF, and the above content is for reference
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