Allicdata Part #: | 2SD2351T106VTR-ND |
Manufacturer Part#: |
2SD2351T106V |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 50V 0.15A SOT-323 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 150mA 250MHz 200m... |
DataSheet: | 2SD2351T106V Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 300nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 820 @ 1mA, 5V |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMT3 |
Base Part Number: | 2SD2351 |
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Transistors are electronic components that control the amount of electric current flowing between two terminals. They are widely used in various industries and applications, such as amplifiers, signal processors, signal switching, and power supplies. The 2SD2351T106V is a low-voltage bipolar junction transistor (BJT) that is designed to be used in wide-range applications.
The 2SD2351T106V is a single BJT, which means that it consists of a single semiconductor layer with three terminals: the base, the emitter, and the collector. It is primarily used as an amplifier or switch in audio, medical, and telecommunication systems. This transistor is rated at 250 mA with a voltage of 200 volts, making it suitable for use in circuits requiring high-powered applications.
When the base terminal of the 2SD2351T106V is connected to a voltage source, current flows through it and is amplified by the collector terminal. The current can also be switched off by simply disconnecting the base terminal from the voltage source. This makes the 2SD2351T106V an ideal choice for circuit switching applications.
The working principle of the 2SD2351T106V can be understood by examining its internal structure. This transistor is made up of a semiconductor layer with p-type and n-type regions sandwiched in between. When a voltage is applied to the emitter terminal, it induces a current flow through the base-collector junction, resulting in the creation of a current loop. This current loop effectively amplifies the current that flows through the collector terminal.
In conclusion, the 2SD2351T106V is an excellent choice for a wide variety of applications requiring high power handling capabilities. Its single BJT configuration makes it easy to use and its current amplification capability makes it suitable for use in a variety of circuit switching applications. By understanding its working principle, engineers and technicians can better utilize this component in their projects.
The specific data is subject to PDF, and the above content is for reference
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