Allicdata Part #: | 2SD2562-ND |
Manufacturer Part#: |
2SD2562 |
Price: | $ 1.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | TRANS NPN DARL 150V 15A TO3PF |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 150V 15A... |
DataSheet: | 2SD2562 Datasheet/PDF |
Quantity: | 1000 |
2160 +: | $ 1.19952 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 10mA, 10A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 5000 @ 10A, 4V |
Power - Max: | 85W |
Frequency - Transition: | 70MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3 Full Pack |
Supplier Device Package: | TO-3PF |
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A BJT is an acronym for Bipolar Junction Transistor. It is an electronic component used to amplify or switch electrical signals and is found in many electronic circuits. The 2SD2562 is an example of a combination of two BJT devices which together form a single integrated circuit (IC). This type of BJT can be used in numerous applications and is a popular choice for switching and amplifier circuits.
The 2SD2562 is a combination of two NPN transistors in one device. This allows the device to be used in many circuits besides the usual switching, amplifier and digital applications. It is a low-noise NPN transistor that is capable of operating in high-temperature environments. The most common application of the 2SD2562 is in amplifier and switching circuits. For example, it can be used in high-power systems to improve the performance of power amplifiers.
The main components of the 2SD2562 are two NPN BJT transistors, a base, and an emitter. The transistor consists of three terminals, the collector (C), the base (B), and the emitter (E). The collector and emitter are connected by an internal resistor, and the base is connected to the circuit’s ground. The base receives input voltage from the circuit and the transistor amplifies it to the load at the collector.
The working principle of a BJT device is fairly simple. When it is in the on state, the base-emitter junction is forward-biased, allowing current to flow between the collector and emitter. This results in a current gain (hfe) which is determined by the ratio of the collector current to the base current. The hfe of the 2SD2562 can range from 45 to 70 at temperatures of between -55°C to +150°C.
When the BJT is in the off state, the base-emitter junction is reversed-biased, preventing current from flowing through the circuit. This makes the transistor ideal for use in switching and amplifier applications, where it can be used to control or amplify electrical signals with ease.
In conclusion, the 2SD2562 is a combination of two NPN transistors, making it ideal for a range of applications ranging from amplifier circuits to switching. The 2SD2562 has a wide temperature range (-55°C to +150°C) and can be used to provide voltage and current amplification up to 70 times.
The specific data is subject to PDF, and the above content is for reference
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