2SK208-O(TE85L,F)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SK208-O(TE85L,F) is a Junction Field Effect Transistor (JFET). It has several application fields, such as amplifier circuits, switching circuits, oscillators and driver circuits, and is also used in high linearity low noise amplifier applications. It can withstand high thermal power dissipation and can be used over a wide temperature range.

The 2SK208-O(TE85L,F) is composed of two elements, the p-channel junction field effect transistor and the MOSFET element. It has an internal gate resistor, which increases circuit stability. The device can easily operate from -40 to +50 degrees Celsius and offers several features, such as low input capacitance, low leakage current, low pinch-off voltage, and low Idss. It comes in a standard TO-3 and TO-220 packages.

The working principle of the 2SK208-O(TE85L,F) is based on the same idea of a junction gate field effect transistor. In such a transistor, a drain-to-source voltage controls the conductivity between the source and the drain. By changing the voltage applied to the gate, the current passing through the drain can be regulated. When the gate voltage is positive, the current passing through is increased, and when it is negative, the current passing through is decreased.

The 2SK208-O(TE85L,F) is a versatile and reliable transistor that can be used in many different applications. It is capable of handling high currents and voltages, and can work well in high frequency oscillator circuits due to its high frequency capability. It also has low input capacitance and low noise immunity, which makes it an ideal choice for low noise amplifier applications. Additionally, it can operate in a wide temperature range, making it suitable for use in many different temperature environments.

The 2SK208-O (TE85L,F) is a reliable and versatile transistor that can be used in many different applications. Its working principle is based on the idea of a junction gate field effect transistor, with a drain-to-source voltage controlling the conductivity between the source and the drain. Its features, such as low input capacitance, low leakage current, low pinch-off voltage, and high frequency capability make it ideal for amplifier, oscillator, and driver circuits. It can withstand high thermal power dissipation and can work in a wide temperature range, making it suitable for use in many different temperature environments.

The specific data is subject to PDF, and the above content is for reference