Allicdata Part #: | 2SK2507(F)-ND |
Manufacturer Part#: |
2SK2507(F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 50V 25A TO220NIS |
More Detail: | N-Channel 50V 25A (Ta) 30W (Tc) Through Hole TO-22... |
DataSheet: | 2SK2507(F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 46 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 30W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220NIS |
Package / Case: | TO-220-3 Full Pack |
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The 2SK2507(F) is a field-effect transistor (FET) used in a variety of circuits. It is a single FET, as opposed to a dual FET which contains two FETs combined in a single package. The 2SK2507(F) has high voltage stability which makes it advantageous in certain high-voltage applications. Because it is a single FET, it is fairly compact and takes up less space than a dual FET.
The 2SK2507(F) is widely used in switching applications such as TV tuners, satellite receivers, and high-voltage rectifiers. It is also used in some audio amplifiers. It can also be used in high-frequency applications such as oscillators and amplifiers. This makes it a versatile and widely used transistor.
The basic operation of the 2SK2507(F) is based on the depletion-mode physics of FETs. The FET has an undergate, which is composed of a source, gate and drain. The voltage applied to the gate will affect the flow of electrons from the source to the drain. When the gate is in a low voltage state, the FET is said to be in the “on” state, which allows for current to flow through the channel. As the voltage applied to the gate increases, the FET is said to be in the “off” state, which prevents current from flowing through the channel.
The 2SK2507(F) is a fairly robust FET, capable of handling up to 600V while remaining stable. It has a low on-resistance and can handle high current demands. This makes it an ideal choice for applications requiring high voltage and current stability. Its small size also makes it a good choice for applications where space is at a premium.
The 2SK2507(F) is also highly efficient in its operation. Its low operating temperature allows it to efficiently dissipate heat and power, while its low leakage current keeps power consumption down. Its high breakdown voltage also allows it to be used in high voltage applications with minimal risk of failure.
Overall, the 2SK2507(F) is a versatile and efficient FET capable of handling a wide variety of applications. Its high voltage stability, low on-resistance, and low operating temperature make it an ideal choice for high-voltage applications. Its small size also makes it a good choice for applications where space is at a premium. With its wide range of applications and performance, the 2SK2507(F) is a reliable and cost-effective option for a number of applications.
The specific data is subject to PDF, and the above content is for reference
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