Allicdata Part #: | 2SK2866(F)-ND |
Manufacturer Part#: |
2SK2866(F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 600V 10A TO-220AB |
More Detail: | N-Channel 600V 10A (Ta) 125W (Tc) Through Hole TO-... |
DataSheet: | 2SK2866(F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2040pF @ 10V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Recently, with the improvement of modern semiconductor technology, the application of transistor has become more and more extensive. And 2SK2866(F) is a kind of semiconductor product which is produced by the latest world-leading technology. Today, we mainly discuss the application field and working principle of the 2SK2866(F). 2SK2866(F) is a type of field effect transistor (FET). Its other name is Silicon N-Channel depletion mode MOSFET (metal–oxide–semiconductor field-effect transistor) with high-voltage characteristics. Compared with the common MOSFET, its main distinctive feature is that it can withstand relatively high voltages. This type of transistor is mainly used in audio field, such as audio amplifiers and relevant high power audio systems. The main advantage of using the 2SK2866(F) is that it can reduce the overall loss of the audio system and effectively improve the sound quality. Besides, the 2SK2866(F) is also suitable for other voltage controlled situations, such as voltage regulators or pulse generators. The working principle of 2SK2866(F) is mainly in line with the other MOSFET. It works as a voltage-controlled electronic switch that has three terminals—gate, drain, and source. By merely changing the voltage of the gate terminal, you can quickly activate or deactivate the conduction between the source and the drain. As a result, the 2SK2866(F) can thus be used as a ideal switch and amplifier. The 2SK2866(F) is mainly fabricated on silicon circuitry based on advancing modern semiconductor engineering technology. It has a very small size and high power handling. It also provides high insulation resistance, low noise and high reliability. All these advantages make the 2SK2866(F) popular for wide range of applications. In summary, the 2SK2866(F) is a type of field effect transistor (FET) with the ability of high voltage withstanding. It is mainly used in audio field such as audio amplifiers and can also be used for other voltage controlled situations. Its main working principle is similar to other MOSFETs. And its many advantages, such as small size and high power, makes it a popular choice for many applications.The specific data is subject to PDF, and the above content is for reference
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