Allicdata Part #: | 2SK2713-ND |
Manufacturer Part#: |
2SK2713 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 450V 5A TO-220FN |
More Detail: | N-Channel 450V 5A (Ta) 30W (Tc) Through Hole TO-22... |
DataSheet: | 2SK2713 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FN |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 10V |
Vgs (Max): | ±30V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 450V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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2SK2713 is a Silicon N-channel Mosfet that is a component of the power MOSFET family, mainly utilized in computer and communication systems. It is often used as switches, amplifiers and rectifiers, especially in high power applications. It has been designed with a low on-resistance, a superior thermal impedance, a high frequency pulse switching capability and an improved small-signal switching performance which make it an ideal device for large power applications.
The 2SK2713 has an impressive range of application fields across many different types of industries, such as Lighting, Air Conditioning, Computer, Audio, Industrial Control and Car Applications. This Power MOSFET is often used in as switches, amplifiers and rectifiers, especially in large power applications. It is also very well-suited for applications such as motor control, switching converters, HID lamp ballast and ignitor circuits, UPS systems, DC-DC converters, voltage regulators, and actuator & power control systems.
The 2SK2713 is built with an enhancement-mode which has a common D-S symetric structure. This type of design is often used when a high-voltage, low-current and improved conduction performance Mosfet is desired. Its main characteristics is the high speed performance and its ability to provide maximum rated current with minimal temperature rise and low gate drive requirements. A gate voltage of just 0.2 V is required to be generated in order to enable the device, a voltage drops of only 0.7 V is noticed when the output stage is at saturation and the on resistance (RDS(on)) is typical 1.6 ohm.
In conclusion the 2SK2713 is an ideal device for high power applications in a wide range of industries. Its high on-resistance, superior thermal impedance, high frequency pulse switching capability and improved small-signal switching performance make it an excellent choice for power handling applications such as DC motor control, switching converters and industry control. The large gate capacitance and low gate threshhold voltage makes it a suitable choice for applications and it can withstand harsh environment conditions.
The specific data is subject to PDF, and the above content is for reference
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