Allicdata Part #: | 2SK2962(TE6FM)-ND |
Manufacturer Part#: |
2SK2962(TE6,F,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH |
More Detail: | Through Hole TO-92MOD |
DataSheet: | 2SK2962(TE6,F,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Bulk |
Part Status: | Obsolete |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92MOD |
Package / Case: | TO-226-3, TO-92-3 Long Body |
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The 2SK2962(TE6,F,M) is a member of the single-type FETs (Field Effect Transistors), and MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) family. It is designed for a wide range of industrial and commercial applications and is made with quality components to ensure maximum performance and reliability.
A MOSFET is a three-terminal, voltage-controlled electronic devices in which a voltage applied to the gate terminal is used to control the current between source and drain terminals. A 2SK2962(TE6,F,M) makes use of one of the most popular types of devices - the Metal-Oxide-Semiconductor (MOS) FET. Consequently, it is suitable for applications requiring precise control such as analog signal processing and high-frequency switching.
2SK2962(TE6,F,M) offers a low On-resistance and can be driven with fast switching operations due to its high transconductance. It has a low power consumption, making it ideal for patient monitoring, medical instrumentation, industrial process control and other applications that require precise current control.
The structure of the 2SK2962(TE6,F,M) is formed of two independently operating transistors sharing a common source and gate terminal. One transistor functions as an n-channel forward MOSFET, while the other transistor functions as a p-channel reverse MOSFET. Each transistor is controlled by its own gate terminal, allowing for higher efficiency in controlling current and voltage.
The working principle of the device is based on charge-carriers or electrons. The electrons in the 2SK2962(TE6,F,M) are held together by a positive voltage applied to the gate. When the voltage exceeds a certain point, the electrons flow into a low-resistance channel, creating a conducting path between source and drain terminals. This conducting path is known as a "channel".
The application field of this device is broad and includes battery management systems, medical instrumentation, audio amplifiers, power supplies, motor controllers, and automotive electronics. Its low power consumption and high transconductance are particularly useful in patient monitoring systems, where it is important to minimize the power required to operate the device.
2SK2962(TE6,F,M) is a popular choice for industrial and commercial applications that require precise control of current and voltage, as well as high frequency switching. It is made of quality components to ensure maximum performance and reliability, and its low on-resistance allows for fast switching operations.
The specific data is subject to PDF, and the above content is for reference
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2SK2221-E | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 200V 8A TO-3P... |
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2SK2740 | ROHM Semicon... | 0.0 $ | 1000 | MOSFET N-CH 600V 7A TO-22... |
2SK2503TL | ROHM Semicon... | -- | 1000 | MOSFET N-CH 60V 5A DPAKN-... |
2SK2504TL | ROHM Semicon... | -- | 1000 | MOSFET N-CH 100V 5A DPAKN... |
2SK2715TL | ROHM Semicon... | -- | 1000 | MOSFET N-CH 500V 2A DPAKN... |
2SK2887TL | ROHM Semicon... | -- | 1000 | MOSFET N-CH 200V 3A DPAKN... |
2SK2719(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 900V 3A TO-3P... |
2SK2847(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 900V 8A TO-3P... |
2SK2916(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 500V 14A TO-3... |
2SK2917(F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 500V 18A TO-3... |
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2SK2962(T6CANO,F,M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
2SK2962(TE6,F,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
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2SK2962,T6F(M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CHThrough Hole T... |
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