Allicdata Part #: | 785-1431-5-ND |
Manufacturer Part#: |
AOTF18N65 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 650V 18A TO220F |
More Detail: | N-Channel 650V 18A (Tc) 50W (Tc) Through Hole TO-2... |
DataSheet: | AOTF18N65 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 390 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3785pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3F |
Package / Case: | TO-220-3 Full Pack |
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AOTF18N65 is a kind of vertical single N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by Alpha and Omega Semiconductor. It features a low on-resistance RDS (on) of 18mΩ at 10V. In other words, it provides a very low resistance between source and drain. The AOTF18N65 was designed to provide efficient power conversion with confined area as well as low cost. Therefore, it is ideal for applications needing low loss and high side-to-side resistance with low on-resistance.
AOTF18N65 has numerous applications. It can be used in audio amplifiers, TV, radio and communication systems, power converters, computer monitors, off line switchers, current regulators, audio amplifiers, and high frequency line drivers. Moreover, it can also be used in automotive electronics, lighting, air conditioners and refrigerators. AOTF18N65 is especially suitable for those applications that require a low on-resistance, low thermal resistance, and low gate charge.
The working principle of the AOTF18N65 is based on a simple concept: the higher the barrier voltage, the higher the gate voltage must be to turn it on. In other words, the higher the gate voltage, the more current will be allowed to flow between source and drain. To turn on the MOSFET, a positive voltage must be applied to the gate. When the voltage rises above the threshold voltage, the devices will turn on and begin to conduct current. In the conduction state, the devices can conduct the desired current until the drain-source voltage reaches a maximum value. When the voltage drops below the threshold voltage, the device will turn off and no longer conduct current.
The manufacturing processes of AOTF18N65 are not as complicated as other transistors. In spite of that, it still utilizes advanced technologies to achieve superior performance. Alpha and Omega Semiconductor takes full advantage of the latest technological advancements such as advanced isolation layer design, thin wafer processing, and vertical N-channel construction. These advancements make the AOTF18N65 more efficient, reliable and durable.
In conclusion, the AOTF18N65 is a great choice for applications that require low on-resistance, low thermal resistance, and low gate charge. With its low cost and high reliability, the AOTF18N65 is sure to become an important part of the power conversion industry for many years to come.
The specific data is subject to PDF, and the above content is for reference
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