![AOTF10N60_003 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | AOTF10N60_003-ND |
Manufacturer Part#: |
AOTF10N60_003 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 10A TO220F |
More Detail: | N-Channel 600V 10A (Tc) 50W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AOTF10N60_003 is a part of Fairchild Semiconductor’s Advanced Power MOSFETs. It is a specifically designed field effect transistor (FET) and is commercialized as a single device. FETs are basically transistors that can switch many times faster than normal transistors. As such, they are often integrated into a device or a system to power up parts that require fast switching. This makes FETs an important component of modern electronics.
AOTF10N60_003 is a N-channel enhancement mode type of FET. This means that when it is turned on, electrons will flow through it in an enhanced manner. It has an internal type of drain source voltage ranging from 10V to 60V. The fast switching characteristic provides a low on resistance, giving it the ability to pass large currents. The switching speed is also aided by the low input capacitance. This allows the AOTF10N60_003 to be used in high frequency applications. Moreover, the part features ESD protection of up to 2KV.
The applications of AOTF10N60_003 generally involve the conversion of electrical energy into mechanical energy. Examples include small motor drivers, industrial fans, small pumps and haptics. For these applications, the AOTF10N60_003 can support low switching frequencies, which are typically in the range of a few hundred kHz. It also supports higher frequencies, up to 1MHz.
In terms of its working principle, AOTF10N60_003 transistors work similarly to any other type of FET. A current controlled gate electrode and a voltage controlled drain-source electrode are used to control the device. The gate voltage controls the current that flows through the transistor, while the drain and source voltage determines the voltage level of the signal. When the gate voltage and the drain-source voltage exceeds the threshold voltage, the FET will start to conduct current. The current flows from drain to source and the gate voltage controls how much current is conducted. This device can also be used in high-side and low-side switch configurations.
In summary, AOTF10N60_003 is a single FET with an internal drain-source voltage range of 10V to 60V. It offers a low on-resistance and is capable of high frequencies, meaning it can be used in applications that require fast switching. These applications can range from small DC motors to low voltage pumps and haptics. The way the device works is based on the standard principle of FETs – current is applied to the gate and the voltage across the drain-source determines the amount of current flowing through the FET.
The specific data is subject to PDF, and the above content is for reference
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