Allicdata Part #: | 785-1519-5-ND |
Manufacturer Part#: |
AOTF15S65L |
Price: | $ 2.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 650V 15A TO220F |
More Detail: | N-Channel 650V 15A (Tc) 34W (Tc) Through Hole TO-2... |
DataSheet: | AOTF15S65L Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.82070 |
10 +: | $ 1.64304 |
100 +: | $ 1.32042 |
500 +: | $ 1.02698 |
1000 +: | $ 0.85093 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 34W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 841pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 17.2nC @ 10V |
Series: | aMOS™ |
Rds On (Max) @ Id, Vgs: | 290 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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AOTF15S65L is a type of mosfet that belongs to the single-transistor family of FETs and MOSFETs. The AOTF15S65L is a voltage-controlled field effect transistor that is designed to be used in applications ranging from small signal to more demanding power applications. It is an ideal choice for applications requiring low gate and low on-resistance.
The AOTF15S65L has a structure with an N-channel enhancement mode with a silicon channel and is built on an internal insulated gate. This mosfet is manufactured using the advanced low voltage technology which allows for low gate-to-source capacitance and low on-resistance for better performance and stability. The AOTF15S65L also features a temperature-independent threshold voltage and fast switching speed.
One of the main advantages of the AOTF15S65L is its ability to operate in a wide range of voltage ranges from -12V to +12V. This mosfet can also handle high current density making it a useful solution for handling current in a variety of applications. This mosfet is also designed with excellent surge handling capabilities making it suitable for applications such as automotive, industrial, consumer and medical.
The AOTF15S65L is also designed to provide excellent power density, making it capable of handling more current with less dissipated power than other similar mosfets on the market. This makes the AOTF15S65L an invaluable solution for a variety of power supply applications. This mosfet also comes with an internal avalanche protection which further ensures safe operation and decreases the potential of short circuit.
The AOTF15S65L is also designed for low noise operation and offers excellent transient protection making it suitable for various audio applications as well as for operations in harsh environments. This mosfet is built with exceptional dielectric characteristics that emphasize the survivability of the device under conditions of high surge or ESD. The AOTF15S65L features a low input capacitance that makes the device suitable for fast switching operations.
The AOTF15S65L functions as a voltage-controlled field effect transistor. When voltage is applied to the gate, it will begin to repel electrons which eventually make the channel conductive. This process begins to occur as soon as voltage is applied, but the current will not be allowed to flow until the threshold voltage is exceeded. Once this voltage is reached, the current will flow. The AOTF15S65L is designed to be used in applications that require low gate and low on-resistance.
The AOTF15S65L is an ideal solution for a wide range of applications. It is an ideal choice for low voltage applications that require low gate and low on-resistance. It is well-suited for audio applications and is able to handle current in a variety of applications. This mosfet is also designed with excellent surge handling capabilities and offers excellent power density making it a valuable solution for power supply applications.
The specific data is subject to PDF, and the above content is for reference
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