| Allicdata Part #: | AOTF12N60-ND |
| Manufacturer Part#: |
AOTF12N60 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 600V 12A TO220F |
| More Detail: | N-Channel 600V 12A (Tc) 50W (Tc) Through Hole TO-2... |
| DataSheet: |  AOTF12N60 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220-3F |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 550 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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AOTF12N60 is a power metal oxide semiconductor field effect transistor (MOSFET) manufactured by Toshiba. It is a single-terminal MOSFET device, which can be used for many industrial applications. The MOSFET is integrated with an improved temperature range and high performance. This article will discuss the application field and working principle of AOTF12N60.AOTF12N60 can be used in a variety of industrial applications, such as consumer electronic products, lighting, motor control, robotics, and telecommunication. In consumer electronic products, AOTF12N60 can be used in the design of power switching applications. It can control and switch loads reliably, while providing high efficiency and low EMI. In lighting, AOTF12N60 can be used as an electronic switch and dimmer to control the output level of the lighting. It can be used in dimming systems for spotlights, downlights and other types of lights. In motor control, AOTF12N60 can be used in the design of reliable and robust motor controllers. The power MOSFET is integrated with features such as very low ON resistance and accurate current regulation, making them ideal for motor control applications. In robotics, AOTF12N60 can be used in the design of robotic controllers and drives. The power MOSFET device can be used to control the motion of robotic arms and legs with extreme precision and accuracy. In telecommunication, AOTF12N60 can be used as an electronic switch to regulate the voltage levels in power amplifiers and power distribution networks.The working principle of AOTF12N60 is based on the drain current-gate voltage (ID-VG) characteristic. The MOSFET is an insulated-gate field effect device. It has a drain pin, a source pin and a gate pin. The drain pin is connected to the drain terminal and the source pin is connected to the source terminal. The drain current is proportional to the gate voltage. As the gate voltage increases, the drain current increases. When the gate voltage reaches the threshold voltage (VGSth), the device begins to conduct current. When the gate voltage is higher than the threshold voltage, the MOSFET is said to be in the on-state. When the gate voltage is below the threshold voltage, the MOSFET is said to be in the off-state.In summary, AOTF12N60 is a power metal oxide semiconductor field effect transistor (MOSFET) manufactured by Toshiba. It is an integrated single-terminal MOSFET with high temperature range and high performance, which can be used in a variety of industrial applications. The working principle of AOTF12N60 is based on the drain current-gate voltage (ID-VG) characteristic. It has three pins, the drain pin, the source pin and the gate pin. When the gate voltage reaches the threshold voltage, the device begins to conduct current and the on-state or the off-state is achieved.
The specific data is subject to PDF, and the above content is for reference
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