Allicdata Part #: | AOTF5N100-ND |
Manufacturer Part#: |
AOTF5N100 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 1000V 4A TO220F |
More Detail: | N-Channel 1000V 4A (Tc) 42W (Tc) Through Hole TO-2... |
DataSheet: | AOTF5N100 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.2 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Field Effect Transistors (FETs) are widely employed in many different applications, and the AOTF5N100 is one of the more common FETs. The AOTF5N100 is an enhancement-mode Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) specifically designed for high-power switching and low-power linear applications. This small and economical FET has excellent performance and stability compared to the other FETs, so it is ideal for many different applications.
AOTF5N100 Working Principle
The MOSFETs are the most basic type of FET, and the AOTF5N100 follows the same basic operating principles. It utilizes an insulated gate to control the flow of current between the source and the drain. The gate is used to control the electric fields around the device, which allows the device to precisely control the current. The AOTF5N100 is essentially an insulated gate that has been optimized for high-power switching and low-power linear applications.
When a voltage is applied between the gate and the source, a layer of electrons forms between the gate and the source. This electron layer is called the “channel” and it acts as a barrier to the flow of current. By changing the voltage on the gate, the size of the channel is changed and the current can be precisely controlled. This is the basic principle of how the AOTF5N100 operates.
AOTF5N100 Applications
The AOTF5N100 is an ideal FET for a variety of applications, such as:
- High-power switching applications. The AOTF5N100 is capable of handling large amounts of current with minimal power dissipation.
- Low-power linear applications. The AOTF5N100 is resistant to temperature changes and can handle large amounts of current over a wide operating temperature range.
- Power converter applications. The AOTF5N100 is perfect for power converters, as it can handle large amounts of current and maintain a high-quality output.
- Motor control applications. The AOTF5N100 is designed for use in motor control applications, as it can handle large amounts of current without excessive power loss.
The AOTF5N100 is an excellent FET for many different applications, as it has excellent performance and stability compared to other FETs. Its small size and economical design make it an ideal choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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