Allicdata Part #: | AOTF10N65-ND |
Manufacturer Part#: |
AOTF10N65 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 650V 10A TO220F |
More Detail: | N-Channel 650V 10A (Tc) 50W (Tc) Through Hole TO-2... |
DataSheet: | AOTF10N65 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1645pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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AOTF10N65MOSFET is a single N-channel enhancement mode discrete transistor which is a power MOSFET mainly used in consumer electronic, motor control and electronic home appliances. It is a high-voltage MOSFET with a voltage rating of 650V and a current rating of 10A in an SOT-323 package. It is designed to have low-on-state resistance and high switching performance.
Features of AOTF10N65
- Adopts Advanced Trench Technology
- High dV/dt capability
- Very low gate charge QG
- Ultra low RDS(on)
- 100% avalanche tested
- Low gate-to-source capacitance
- Operating temperature range -40℃ to 150℃
AOTF10N65 Application Fields
AOTF10N65 is primarily used for consumer electronic, motor control and electronic home appliances. It is ideal for a variety of applications such as switching regulators, lighting control, DC-DC converters, portable communications equipment, IGBT drivers, power supply and motor drivers.
This MOSFET can also be used to build high-efficiency DC-DC converters. It allows very fast switching times and enables high-efficiency operation. Moreover, this MOSFET can also be used in DC motor controllers to provide an adjustable speed range. The low power dissipation and low gate drive make it a perfect choice for these applications.
AOTF10N65 Working Principle
The working principle of an AOTF10N65 MOSFET is very simple. It works on the principle of voltage-driven conduction. The MOSFET is constructed with an insulated gate that acts like an electronic switch. When the voltage is applied to the gate, it create an electric field between the gate and the source, which in turn changes the conductivity of the MOSFET.
In a single N-channel MOSFET, the voltage applied to the gate attracts the electrons from the source towards it, thus reducing the reverse bias and increasing the conduction of the MOSFET between drain and source. This voltage is referred to as the threshold voltage Vth. For an N-channel MOSFET, Vth is typically 5V or above.
When the input voltage is lower than the threshold voltage, MOSFET remains in the cutoff state, i.e. no current flows in between drain and source. But when the input voltage is higher than the threshold voltage, MOSFET switches on and the drain-source current starts flowing. This is the principle on which AOTF10N65 MOSFET operates.
Conclusion
AOTF10N65 is a high performance power MOSFET mainly used for consumer electronics, motor control and electronic home appliances. It offers features such as low on-state resistance, high switching performance and hass low gate-to-source capacitance. It works on the principle of voltage-driven conduction and enable fast switching times, enabling high-efficiency operations.
The specific data is subject to PDF, and the above content is for reference
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