Allicdata Part #: | AOTF10N60-ND |
Manufacturer Part#: |
AOTF10N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 10A TO220F |
More Detail: | N-Channel 600V 10A (Tc) 50W (Tc) Through Hole TO-2... |
DataSheet: | AOTF10N60 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
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<h3>AOTF10N60 Application Field and Working Principle</h3><p>The AOTF10N60 is a field effect transistor (FET) from Alpha & Omega Semiconductor Inc. It is a n-channel enhancement-mode power MOSFET specifically designed to minimize the on-state resistance (RDSon) and provide superior switching performance. The AOTF10N60 is an ideal choice for high efficiency and low dissipation applications, such as telecom infrastructure, power management, and industrial applications.</p><p><strong>Application Field</strong></p><p>With its high efficiency and low dissipation, the AOTF10N60 is suitable for a wide range of applications including:</p><ul> <li>Telecom Infrastructure: The AOTF10N60 is an ideal choice for high power efficiency and low power loss in telecom infrastructure, powering up ICs and transceivers in base stations and switching networks.</li> <li>Power Management: The device can be used in applications requiring low power consumption, such as power management for PCs and mobile devices.</li> <li>Industrial Applications: As a power switch with low power consumption, the AOTF10N60 can be used for motor control, lighting control and industrial automation applications.</li></ul><p><strong>Working Principle</strong></p><p>The working principle of a MOSFET is based on the transistor effect. A MOSFET is a field-effect transistor (FET) that uses the gate-to-source voltage (VGS) to control the conductivity between the source and drain terminals (D-S). The AOTF10N60 has an n-channel enhancement-mode power MOSFET, meaning that the conductivity between the drain and source terminals increases with the application of a gate-to-source voltage (VGS) greater than the threshold voltage (VTH). When the voltage applied is less than the threshold voltage (VTH), the channel between the drain and the source terminals remains off and the channel can only be opened or closed by varying the voltage applied to the gate.</p><p>The AOTF10N60 has an RDS(on) of 60 milliOhms and is capable of providing high efficiency and low dissipation. The RDS(on) is greatly reduced as the temperature of the device increases, providing superior switching performance. The device operates in a range of temperatures from -55 °C to +150 °C and can handle up to 200V for the drain-to-source voltage.</p><p>The AOTF10N60 includes a special low gate charge technology to reduce power dissipation and minimize the switching time. This technology is beneficial for applications which require faster switching time and low power consumption.</p><p>The AOTF10N60 is an ideal choice for simple and efficient power management applications due to its low RDS(on), low power dissipation, fast switching speed, and wide temperature operating range.</p>The specific data is subject to PDF, and the above content is for reference
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