AOTF7S60L Allicdata Electronics
Allicdata Part #:

785-1521-5-ND

Manufacturer Part#:

AOTF7S60L

Price: $ 0.68
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 600V 7A TO220F
More Detail: N-Channel 600V 7A (Tc) 34W (Tc) Through Hole TO-22...
DataSheet: AOTF7S60L datasheetAOTF7S60L Datasheet/PDF
Quantity: 1000
1000 +: $ 0.60968
Stock 1000Can Ship Immediately
$ 0.68
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220-3F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 34W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Series: aMOS™
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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AOTF7S60L is a type of single-gate MOSFET (metal–oxide–semiconductor field-effect transistor). This component is a critical component in constructing high-speed, low-power integrated circuits for a variety of applications. Its main advantage is its low off-state current, which makes it suitable for high-speed, low-power switching applications. In addition, it has a wide range of voltage and current ratings, making it suitable for a wide range of applications.

The AOTF7S60L is a single-gate MOSFET with a drain-gate voltage of 60V and a drain current of 500mA. It is built using a standardized MOSFET process and is designed to switch high voltages at low frequencies. The AOTF7S60L is available in a variety of package sizes and shapes, including surface-mount and through-hole packages.

The AOTF7S60L operates using the same basic principles as other single-gate MOSFETs. Like all other field-effect transistors (FETs), it uses an electric field to control the conductivity of a semiconductor material. In order to create this electric field, a gate voltage must be applied to the AOTF7S60L. When a sufficient gate voltage is applied, the result is an inversion layer which forms at the semiconductor/insulator interface. As thevoltage increases, so does the conductivity of the inversion layer, allowing current to flow from the drain to the source.

The main application for the AOTF7S60L is as a high-speed, low-power switch. It is often used in power supplies, switching power converters and motor drives. It can also be used in digital circuits where very low power consumption and high speeds are desired. Due to its low off-state current and low voltage drop during operation, it is especially useful in low-power, high-speed digital circuits.

The AOTF7S60L can also be used as a temperature sensor. Due to the low off-state current, the device can be used to detect the temperature of the environment. When the temperature rises above a certain limit, the device will switch off and the voltage drops, indicating that the environment has become too hot to remain operational. It is a useful feature for designers that require temperature control in their applications.

In addition to high-speed, low-power switching, the AOTF7S60L can also be used in analog applications. It is often used as an amplifier or as a filter in analog circuits. Due to its low power dissipation, it can be used to drive low-power analog signals, such as those produced by microphones or sensors. It can also be used as an amplifier in small audio applications, such as amplifying music signals for headphones.

The AOTF7S60L is a single-gate MOSFET that offers a wide range of voltage and current ratings, as well as low off-state current. Its main applications include high-speed, low-power switching, temperature sensors and amplifiers for small audio applications. It is available in a variety of package sizes and shapes, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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