Allicdata Part #: | AOTF12N50_001-ND |
Manufacturer Part#: |
AOTF12N50_001 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH TO220 |
More Detail: | N-Channel |
DataSheet: | AOTF12N50_001 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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The AOTF12N50_001 is a Power Field Effect Transistor (FET) device, which belongs to the single transistor family. It is designed specifically to operate under a wide variety of high power applications, such as motor control, high current switching, power supply, and switching converter loads. Its major advantages include its very low on state resistance, high efficiency, and high frequency performance. In this article, we will discuss the application field and working principle of the AOTF12N50_001.
Application Field
The AOTF12N50_001 is used to control high power currents and switching applications. It offers high speed switching for high frequency applications, such as motor control and high current switching. The FET offers exceptionally low on-state resistance, so it can easily handle current loads of up to 12 Amperes.Due to its small size, the AOTF12N50_001 can attain a high switching speed. This makes it suitable for applications such as high speed electric motor control, uninterruptible power supply (UPS) applications, as well as high current switching applications, such as DC-DC converters. Additionally, the FET can also be used in power supply and switching circuit applications such as lightning, SMPS, and buck-boost converters.
Working Principle
The AOTF12N50_001 FET is composed of a single N-channel MOSFET with a maximum ‘ON’ resistance of 50mΩ. This FET consists of a drain, a source, and a gate. When a voltage is applied across the drain and source, current starts to flow from drain to source. The ‘ON’ resistance of the FET is determined by the voltage difference between the drain and source.When a voltage is applied to the gate, the FET will induce a channel between the drain and source. This channel can reduce the ‘ON’ resistance. As more voltage is applied to the gate, more current is allowed to flow between the drain and source. The power efficiency of the FET is determined by the difference between the ‘ON’ resistance and the ‘OFF’ resistance.The FET also offers high frequency performance, which is suitable for applications that require high switching speed. The AOTF12N50_001 offers high frequency performance up to 15MHz, and can quickly switch from high current to low current in a short amount of time. This makes it suitable for high current switching applications.
Conclusion
In conclusion, the AOTF12N50_001 is a highly efficient Power FET, which operates under a wide variety of high power applications. Its major advantages include its very low on state resistance, high efficiency, and high frequency performance. It is used to control high power currents and switching applications. It is suitable for applications such as high speed electric motor control, uninterruptible power supply (UPS) applications, as well as high current switching applications, such as DC-DC converters. The FET also offers high frequency performance up to 15MHz, which makes it suitable for applications that require high switching speed.
The specific data is subject to PDF, and the above content is for reference
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