AOTF18N65_001

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AOTF18N65_001 is a vertical N-channel trench insulated gate field effect transistor (IGFET) from Lichi Semiconductor. It utilizes a new trench technology and is designed for use in high voltage switching and synchronous rectifier applications. The device has an advanced planar structure, allowing for a higher maximum operating voltage. The AOTF18N65_001 has a maximum drain current of 18A and a maximum source-drain voltage of 650V. Its on-resistance ranges from 0.14ohm to 0.247 ohm at 4.5V gate drive voltage.

The Working Principle of AOTF18N65_001 is based on the physical phenomenon of insulated-gate field-effect transistors (IGFETs), which are unipolar devices that use an insulated gate to control current flow between the source and the drain. The gate terminal is electrically separated from the source and drain via a thin gate insulation layer, allowing voltage applied to the gate terminal to control current flow. The current flow is determined by the spin of the electrons in the channel between the source and the drain.

The AOTF18N65_001 device is designed to provide analogue performance at high frequencies in electrical signal processing applications such as synchronous rectification, DC-DC converters, and AC signal amplification. It features an operating temperature range from -55°C to 150°C and offers high drive current capability and low gate charge. The AOTF18N65_001 also offers a wide gate range and high output capability.

Applications of the AOTF18N65_001 include high voltage switching, voltage regulator, motor control, and inductor based converters. In addition, the device can be used in high current switching applications such as audio amplifiers, battery chargers, UPS systems, and in some industrial automation applications. Due to its superior high-frequency switching performance, the AOTF18N65_001 is also suitable for use in radio frequency applications including in-vehicle audio systems, bluetooth headsets, and radio frequency transmitters.

The AOTF18N65_001 is an ideal device for applications that require high efficiency, low on-state resistance, and high-frequency switching performance. Its advanced trench technology and planar structure enable the device to have a high maximum operating voltage and a low gate charge. These features make the AOTF18N65_001 suitable for applications that require reliable, high-quality performance.

The specific data is subject to PDF, and the above content is for reference