Allicdata Part #: | AOTF20S60_900-ND |
Manufacturer Part#: |
AOTF20S60_900 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH TO220 |
More Detail: | N-Channel |
DataSheet: | AOTF20S60_900 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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AOTF20S60_900 is a type of single Mosfet (metal oxide semiconductor field effect transistor) which is used in a wide range of applications. Its internal structure consists of three terminals, the source, gate and drain. The source terminal is connected to the gate and drain. This device is a N-channel MOSFET which means that the positive gate voltage turns the MOSFET on and the output is a voltage proportional to the gate voltage.
This type of field effect transistor is most commonly used as an amplifier or switch because of its high frequency, low distortion and low noise. It is especially suitable for switching, high-frequency amplification, audio, RF and power applications. Additionally, it is used in analog circuits for interfacing and for low voltage, low power consumption.
The working principle behind this MOSFET involves the principles of resistance and capacitance. When a voltage is applied at the gate, a thin layer of electrically charged negative carriers, called the “depletion region”, is created between the source and the drain. The applied voltage reduces the width of this depletion region, which in turn reduces the resistance between the source and drain, thus decreasing the voltage drop. The voltage drop between the source and the drain increases as the width of the depletion region increases.
In order to increase the current flow, the source-to-drain resistance needs to be reduced. This can be done by applying a positive voltage at the gate thus increasing the width of the depletion region and reducing the resistance. This process allows a larger amount of current to flow from the source to the drain.
AOTF20S60_900 is widely used in various industrial, commercial and consumer applications. As it is very reliable, with excellent long-term stability, it is also suitable for medical applications. It is widely used as a switching device, so it can be used to control electricity in any application such as lighting or power supplies. It can also be used as an amplifier in audio and radio frequency (RF) applications. In addition, it can be used as a switch in control systems, and as an interface between digital and analog circuits.
The AOTF20S60_900 is one of the most popular single Mosfet devices due to its versatility and reliability. Its structure enables it to be used in a wide range of industrial, commercial, and consumer applications, making it a popular choice for designers. Its working principle involves the changes in resistance according to the applied voltage at the gate.
In conclusion, the AOTF20S60_900 single MOSFET is a versatile device that can be used in a variety of applications. It is highly reliable and long-lasting, making it suitable for both commercial and industrial applications. Its working principle enables it to reduce the resistance between the source and drain, thus allowing for larger current flows. Lastly, it is a cost-effective device with high frequency, low distortion, and low noise characteristics, making it a popular choice for designers.
The specific data is subject to PDF, and the above content is for reference
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