AOTF409

Vgs(th) (Max) @ Id:	2.4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FL
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	2.16W (Ta), 43W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2953pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	52nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	40 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	5.4A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tube

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AOTF409 is a versatile single-channel field-effect transistor (FET) designed for a wide range of applications. It is a general purpose, fast switching device with excellent current handling capability and high speed performance. It is ideal for use in power supplies and other switching applications.The AOTF409 is a N-channel depletion-mode FET, meaning that its gate is not grounded. This type of FET is commonly used in power supplies, commutation circuits, and in pulse-width modulation (PWM) circuits. AOTF409 has a maximum drain-source voltage (Vds) rating of 20V and a maximum drain current (Id) of 3.2A. The device has an on-resistance (Rdson) of 19 mΩ, with a low gate-source leakage current (Igs) of 1.4 μA. It also has a typical input capacitance of 10pF and a fast switching speed of 36V/ns. The device is built on a silicon die, which provides a low noise level and good thermal conductivity. Its insulation withstand voltage and surge withstand voltage are respectively 500V and 1500V, making the device suitable for high voltage applications. Another important feature of AOTF409 is its small size. It is available in both standard TO-220 and extended TO-263 package options, which is especially helpful in space constrained applications. The FET\'s working principle is simple. An electrical signal, usually originating from a resistor, is applied to the gate of the device. This, in turn, controls the current that passes between the drain and the source. When a positive voltage is applied to the gate, the N-channel device is in its “on” state, and current will flow from the drain to the source. When the gate voltage is negative, the device is in its “off”state and no current will flow. In short, the AOTF409 offers an excellent combination of high switching speed, low on-resistance, and robustness. It is ideal for use in a wide range of applications, from general purpose switching applications to pulse-width modulation circuits. Its small size, low noise operation, and high insulation ratings make it well suited for higher voltage and space-constrained applications.

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