Allicdata Part #: | 785-1432-5-ND |
Manufacturer Part#: |
AOTF20N40L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 400V 20A TO220F |
More Detail: | N-Channel 400V 20A (Tc) 40W (Tc) Through Hole TO-2... |
DataSheet: | AOTF20N40L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2290pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 40W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3F |
Package / Case: | TO-220-3 Full Pack |
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AOTF20N40L is a single MOSFET that can be used in a variety of applications. It is a voltage-mode insulated gate field effect transistor (IGFET) that is designed for high speed switching in consumer electronics, computers, telecommunications, and automotive applications.
AOTF20N40L offers maximum power dissipation of 600mW, maximum drain-source breakdown voltage of 40V, gate-source threshold voltage of 3V, maximum drain current of 5.5A, and total gate charge of 12.6nC, making it suitable for the design of high reliability, high performance and cost-effective solutions for consumer, automotive and industrial applications. The device also features low on-resistance of 20mΩ at 4.5V gate-source voltage, low input capacitance of 26pF, and low output capacitance of 83pF.
The AOTF20N40L can be used to drive a wide range of high current switching applications. In consumer electronics, it can be used for on/off switching of appliances, for example for TVs, DVD players, video game consoles, etc. In automobiles, it can be used for the control of high current loads, such as headlights, door and window motors, and car ignition systems. Additionally, in industrial applications, it can be used to switch high current loads such as compressors, pumps and motors. As it is a voltage-mode device, it can be used to drive two-phase switching applications and can be powered from either DC or AC power supplies.
The working principle of MOSFETs is based on the electrostatic force between a metallic gate and the channel. When a voltage is applied to the gate electrode, it causes an electric field to appear across the channel. This electric field attracts the electrons in the channel, causing them to accumulate near the gate and form an inversion layer. This inversion layer acts as a "barrier" between the source and drain, hence the name field effect transistor (FET). When the gate voltage is increased further, the gate-source voltage (Vgs) falls below the threshold voltage, VT, and the MOSFET is turned on, allowing current to flow between the source and drain. The drain current (Id) can then be controlled by adjusting the gate voltage (Vgs).
In summary, AOTF20N40L is a single MOSFET transistor that can be used in a wide range of applications, from consumer electronics to automotive and industrial applications. It features low on-resistance and capacitance, making it ideal for high current switching applications. The working principle of MOSFETs is based on the electrostatic force between the gate and the channel, and current flow between the source and drain is controlled by adjusting the gate voltage.
The specific data is subject to PDF, and the above content is for reference
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