Allicdata Part #: | AOTF25S65-ND |
Manufacturer Part#: |
AOTF25S65 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 650V 25A TO220F |
More Detail: | N-Channel 650V 25A (Tc) 50W (Tc) Through Hole TO-2... |
DataSheet: | AOTF25S65 Datasheet/PDF |
Quantity: | 1000 |
Series: | aMOS™ |
Packaging: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26.4nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1278pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3F |
Package / Case: | TO-220-3 Full Pack |
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AOTF25S65 Application Field and Working Principle
An AOTF25S65 is a type of field-effect transistor (FET) which belongs to a single category of FETs. It is a discrete semiconductor device which is used as a switch to control the current between the source and the drain terminals. It is commonly used in power switching applications.
AOTF25S65 transistors are typically normally off devices and have high input impedance, low output impedance, and are capable of being operated over very wide voltage and current ranges. They are also capable of providing very high switching speeds and can be operated with very small input currents. The series of AOTF25S65 FETs come with a variety of different ratings, including breakdown voltages of between 8 and 25 volts, peak current ranges of between 0.17 and 4.50 Amps, and peak power dissipation values of between 0.83 and 28 watts.
The main advantage of using an AOTF25S65 is that they are capable of providing extremely fast switching which is ideal for high power applications. Additionally, they can handle relatively high voltages and currents, making them suitable for additional applications such as power supplies and motor drivers.
The working principle of the AOTF25S65 is based on the fact that when voltage is applied across the source and drain terminals, a channel is formed between source and drain. This channel is known as the channel of the FET, and it is caused by the arrangement of the semiconductor material in the FET. The channel is formed by the attraction of positively-charged electrons to the drain as a result of the voltage applied across the source and drain terminals.
When a voltage greater than the breakdown voltage of the FET is applied across the terminals, the channel begins to pinch off, meaning that the electrons that were attracted to the drain are unable to move freely through the channel. This effectively blocks the flow of current, resulting in the transistor acting as a switch.
The AOTF25S65 is a popular choice for applications such as power supplies, motor drivers, voltage regulators, and other high-power switching and control applications. Additionally, they can be used as switches in audio amplifiers, as well as for several other applications.
In conclusion, AOTF25S65 FETs are a type of single FET which can be used for a variety of power switching and control applications, due to their ability to provide fast switching, high current, and high voltage handling capabilities.
The specific data is subject to PDF, and the above content is for reference
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