Allicdata Part #: | AOTF260L-ND |
Manufacturer Part#: |
AOTF260L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 60V 19A TO220F |
More Detail: | N-Channel 60V 19A (Ta), 92A (Tc) 1.9W (Ta), 46.5W ... |
DataSheet: | AOTF260L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta), 92A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 11800pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 1.9W (Ta), 46.5W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3F |
Package / Case: | TO-220-3 Full Pack |
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AOTF260L is a junction field-effect transistor (JFET) fabricated in short channel silicon/silicon-germanium (Si/SiGe) hetero-junction technology. It is a single-transistor type with low channel resistance and low pinch voltage. As such, it is suitable for applications which require low-power consumption, such as low-leakage current, low-voltage, power-sensitive and temperature-regulated circuits.
AOTF260L has a gate-source voltage of -2V and works as a depletion-mode device. The drain-source current is characteristically determined by the gate-source voltage. It is also capable of supporting two simultaneously-switched outputs with a VDD voltage of 5V.
AOTF260L applications include low-power circuits, temperature-controlled circuits, power-sensitive circuits and high frequency applications. Its features are particularly suitable for low-power applications, resulting in reduced power consumption, lower heat dissipation, improved efficiency and reliable performance.
The working principle of AOTF260L is as follows. A voltage or current applied between the gate and source introduces a depletion region at the drain-source junction. This reduces the pinch voltage, and increases the drain-source leakage current. As such, the drain-source current path is reduced. The operating voltage of the AOTF260L can be used to control the drain-source current and the gate-source voltage can be adjusted to set the drain-current.
AOTF260L can also be used in high-frequency applications. It has a high transconductance and high frequency response, making it suitable for high speed circuits and switching applications. Its low channel resistance allows it to support high frequency operation without a large induced thermal resistance.
In summary, AOTF260L is a single-transistor type JFET capable of supporting two simultaneously-switched outputs with a VDD voltage of 5V. It is suitable for low-power and temperature-controlled circuits, and has features which make it suitable for high frequency applications. Its working principle is to reduce the pinch voltage and establish the drain-source current path.
The specific data is subject to PDF, and the above content is for reference
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