AOTF260L Allicdata Electronics
Allicdata Part #:

AOTF260L-ND

Manufacturer Part#:

AOTF260L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 60V 19A TO220F
More Detail: N-Channel 60V 19A (Ta), 92A (Tc) 1.9W (Ta), 46.5W ...
DataSheet: AOTF260L datasheetAOTF260L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 30V
FET Feature: --
Power Dissipation (Max): 1.9W (Ta), 46.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3F
Package / Case: TO-220-3 Full Pack
Description

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AOTF260L is a junction field-effect transistor (JFET) fabricated in short channel silicon/silicon-germanium (Si/SiGe) hetero-junction technology. It is a single-transistor type with low channel resistance and low pinch voltage. As such, it is suitable for applications which require low-power consumption, such as low-leakage current, low-voltage, power-sensitive and temperature-regulated circuits.

AOTF260L has a gate-source voltage of -2V and works as a depletion-mode device. The drain-source current is characteristically determined by the gate-source voltage. It is also capable of supporting two simultaneously-switched outputs with a VDD voltage of 5V.

AOTF260L applications include low-power circuits, temperature-controlled circuits, power-sensitive circuits and high frequency applications. Its features are particularly suitable for low-power applications, resulting in reduced power consumption, lower heat dissipation, improved efficiency and reliable performance.

The working principle of AOTF260L is as follows. A voltage or current applied between the gate and source introduces a depletion region at the drain-source junction. This reduces the pinch voltage, and increases the drain-source leakage current. As such, the drain-source current path is reduced. The operating voltage of the AOTF260L can be used to control the drain-source current and the gate-source voltage can be adjusted to set the drain-current.

AOTF260L can also be used in high-frequency applications. It has a high transconductance and high frequency response, making it suitable for high speed circuits and switching applications. Its low channel resistance allows it to support high frequency operation without a large induced thermal resistance.

In summary, AOTF260L is a single-transistor type JFET capable of supporting two simultaneously-switched outputs with a VDD voltage of 5V. It is suitable for low-power and temperature-controlled circuits, and has features which make it suitable for high frequency applications. Its working principle is to reduce the pinch voltage and establish the drain-source current path.

The specific data is subject to PDF, and the above content is for reference

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