BD135-16

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The BD135-16 bipolar junction transistor (BJT) is one of the latest advancements in electronic device technology. It is a NPN silicon device with low voltage level, high current and low noise characteristics. It is ideal for use in audio amplification, inverter, logic circuits and general-purpose control applications.

The BD135-16 is constructed from two N-type semiconductor crystals connected side-by-side. Its terminals are labeled as the collector, base and emitter. The collector stores the majority of the current for the device, while the base/emitter acts as the switch, controlling the amount of current that passes through.

In operation, a voltage is applied to the base in order to control the device’s on/off state. When the base voltage increases, the device turns on and current starts to flow. This current flow is initiated by majority carriers in the base region, which are released to the emitter at an exponential rate as the collector-emitter voltage increases. This is also known as the active region.The BD135-16 has a max collector-emitter voltage rating of 16V and a maximum operating frequency of 500kHz. It features a maximum collector current of 800mA and a maximum power dissipation of 0.5W. Its collector-emitter breakdown voltage is measured at 40V. Additionally, its small package size allows for easy mounting in circuit boards.

In summary, the BD135-16 BJT is a suitable electronic device for use in a wide range of high-current applications. Its low noise level, high current, and low voltage level capabilities makes it an optimal choice for applications such as audio amplification, inverter, logic circuits and general-purpose control. Furthermore, its small package size and good thermal dissipation characteristics make it suitable for use in linear and digital circuits.

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