BD137G Allicdata Electronics
Allicdata Part #:

BD137GOS-ND

Manufacturer Part#:

BD137G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 1.5A TO-225AA
More Detail: Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Throu...
DataSheet: BD137G datasheetBD137G Datasheet/PDF
Quantity: 3058
Stock 3058Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1.25W
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: BD137
Description

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The BD137G is a two-terminal, NPN bipolar junction transistor (BJT) featuring a maximum gain of 800 and the ability to handle currents up to 1.5A. It was developed by Motorola in the early 1990s and continues to be one of the industry\'s most widely used transistors today.

A BJT is a three-layer semiconductor device which is formed from two PN junctions. It has a small base region in the middle, which is sandwiched between the two larger emitter and collector regions. When current flows through the base region, it switches on the transistor, allowing current to flow from the emitter to the collector. The gain of a BJT is determined by its geometry and doping, and is expressed as the ratio of collector current to base current (hfe).

The BD137G is designed for general purpose switching applications. It is particularly well-suited for small signal amplification, as its large, 800 hfe ensures that small changes in base current will cause correspondingly large changes in collector current. The BD137G can also be used in low noise amplifiers, high speed switching circuits, and power amplifiers.

The BD137G operates in much the same manner as any other BJT, except it features a relatively high gain of 800. The typical DC current gain of the BD137G is 400 to 600, but it can reach as high as 800. When the base current is increased, the transistor\'s collector current increases as well, resulting in a relatively large change in collector current for a given amount of base current.

The BD137G is also known for its low voltage rating, which ranges from 20V to 80V. This makes it suitable for use in low-voltage applications, such as those found in battery-powered equipment. Furthermore, it has a relatively low saturation voltage, meaning it can be used in high-powered applications without risk of overheating.

The BD137G has a wide range of uses, including amplifier, switch, and low noise amplifier circuits. Its high gain and low voltage rating make it an ideal choice for many applications, such as in audio circuits, motor control, and signal processing. Its wide range of uses makes it a popular choice for a variety of electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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