BD13510STU

BD13510STU is a NPN Epitaxial Silicon Transistor typically used in various applications such as amplifier, switching and linear circuits. It is categorised as a Single Bipolar Junction Transistor (BJT). The BD13510STU is capable ofwithstanding a voltage of up to 25V, making it suitable for general-purpose, medium power, small-signal and switching applications.

The working principle of the BD13510STU is based on the flow of electrons between the emitter and the collector region. In a NPN transistor, the emitter region is maintained at a lower potential then the collector and the base regions. When the base is forward biased, it allows the electrons from the emitter to flow from the base to the collector region, due to the higher potential of the collector region. This creates a current flow from the collector to the emitter, resulting in amplification circuitry.

The BD13510STU is used in a range of different applications due to its flexibility and high voltage capacity. It is particularly suited for use in amplifiers, as it provides a low gain short-circuit current in the forward-biased base-emitter junction and high breakdown voltage in the reverse-biased base-collector junction. It is also used as a switch, as it can open and close an electrical circuit with a current or voltage signal, due to its low cross-over voltage. Furthermore, the BD13510STU can be used in linear circuits, where it is capable of adjusting the output electrical signal to a predetermined level.

In summary, the BD13510STU is an NPN Epitaxial Silicon Transistor which falls into the Single Bipolar Junction Transistor (BJT) category and is suitable for various applications such as amplifiers, switching and linear circuits. It is designed for high voltage capacity and can provide a low gain short-circuit current and high breakdown voltage in its forward and reverse biased Junctions.